Electron and Hole Spin Splitting and Photogalvanic Effect in Quantum Wells

L.E. Golub
DOI: https://doi.org/10.1103/PhysRevB.67.235320
2003-07-31
Abstract:A theory of the circular photogalvanic effect caused by spin splitting in quantum wells is developed. Direct interband transitions between the hole and electron size-quantized subbands are considered. It is shown that the photocurrent value and direction depend strongly on the form of the spin-orbit interaction. The currents induced by structure-, bulk-, and interface-inversion asymmetry are investigated. The photocurrent excitation spectra caused by spin splittings in both conduction and valence bands are calculated.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to understand the Circular Photo - Galvanic Effect (CPGE) caused by spin splitting in Quantum Wells (QWs). Specifically, the author has developed a theoretical model to describe how electron and hole spin splitting caused by Structural Inversion Asymmetry (SIA) and Bulk Inversion Asymmetry (BIA) lead to photocurrents with different characteristics. The following are the main problems and objectives of the paper: 1. **Research Background**: - Spintronics has received extensive attention in recent years, especially in semiconductor quantum wells, where spin characteristics can be controlled by advanced techniques. - Besides the Rashba spin - orbit interaction (caused by SIA), other effective magnetic fields such as the Dresselhaus field (caused by BIA) also have an impact on carriers. 2. **Research Problems**: - In quantum wells grown in the (001) direction, SIA and BIA have similar spin - splitting dependencies at low wave vectors, and it is difficult to distinguish their effects. - This paper aims to reveal the different contributions of SIA and BIA in quantum wells by studying the Circular Photo - Galvanic Effect and provide an experimentally distinguishable method. 3. **Research Objectives**: - Develop a theoretical framework to explain the Circular Photo - Galvanic Effect caused by spin splitting. - Calculate and analyze the photocurrent excitation spectra caused by SIA and BIA. - Explore the manifestations of these effects in different types of quantum well materials, especially III - V semiconductor quantum wells. 4. **Specific Problems**: - Study how direct interband transitions lead to circularly polarized photocurrents. - Analyze the contributions of SIA and BIA at different wave vectors and calculate the corresponding photocurrent spectra. - By comparing the photocurrent behaviors in the cases dominated by SIA and BIA, propose an experimentally distinguishable method for these two asymmetries. 5. **Key Formulas**: - Expression for circularly polarized photocurrent: \[ j_i(\omega)=-\beta_{li}\hat{o}_lP_{\text{circ}}\left(\frac{epA_0}{m_0\hbar c}\right)^2\frac{e}{\hbar}G(k_\omega) \] - Expression for the photocurrent excitation spectral function \(G(k)\): \[ G(k)=k\frac{\gamma(k)v(k)}{d}\frac{d}{dk}\left[\frac{F(k)u(k)}{v(k)}\right]+\frac{F(k)}{v(k)}\left[\frac{u(k)}{v(k)}-2\right] \] Through these studies, the author hopes to provide a new tool for experimental physicists to gain a deeper understanding of spin characteristics and symmetry in quantum wells.