Growth of Single Unit-Cell Superconducting La$_{2-x}$Sr$_x$CuO$_{4}$ Films

A. Rufenacht,P. Chappatte,S. Gariglio,Ch. Leemann,J. Fompeyrine,J.-P. Locquet,P. Martinoli
DOI: https://doi.org/10.1016/S0038-1101%2803%2900191-6
2003-02-13
Abstract:We have developed an approach to grow high quality ultrathin films of La$_{2-x}$Sr$_x$CuO$_{4}$ with molecular beam epitaxy, by adding a homoepitaxial buffer layer in order to minimize the degradation of the film structure at the interface. The advantage of this method is to enable a further reduction of the minimal thickness of a superconducting La$_{1.9}$Sr$_{0.1}$CuO$_{4}$ film. The main result of our work is that a single unit cell (only two copper oxide planes) grown on a SrLaAlO$_4$ substrate exhibits a superconducting transition at 12.5 K (zero resistance) and an in-plane magnetic penetration depth $\lambda_{ab}(0)$ = 535 nm.
Superconductivity
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