Electronic Inhomogeneity and Band Structure in Superstructural CuO2 Planes of Infinite-Layer Sr0.94La0.06CuO2+y Films

Rui-Feng Wang,Jiaqi Guan,Yan-Ling Xiong,Xue-Feng Zhang,Jia-Qi Fan,Jing Zhu,Can-Li Song,Xu-Cun Ma,Qi-Kun Xue
DOI: https://doi.org/10.1103/physrevb.102.100508
2020-01-01
Abstract:Scanning tunneling microscopy and spectroscopy are utilized to study the atomic-scale structure and electronic properties of infinite-layer ${\mathrm{Sr}}_{0.94}{\mathrm{La}}_{0.06}\mathrm{Cu}{\mathrm{O}}_{2+y}$ films prepared on $\mathrm{Sr}\mathrm{Ru}{\mathrm{O}}_{3}$-buffered $\mathrm{Sr}\mathrm{Ti}{\mathrm{O}}_{3}$(001) substrate by ozone-assisted molecular beam epitaxy. Incommensurate structural supermodulation with a period of 24.5 $\text{\AA{}}$ is identified on the $\mathrm{Cu}{\mathrm{O}}_{2}$-terminated surface, leading to characteristic stripes running along the ${45}^{\text{o}}$ direction with respect to the Cu-O-Cu bonds. Spatially resolved tunneling spectra reveal substantial inhomogeneity on a nanometer-length scale and emergence of in-gap states at sufficient doping. Despite the Fermi level shifting up to 0.7 eV, the charge-transfer energy gap of the $\mathrm{Cu}{\mathrm{O}}_{2}$ planes remains fundamentally unchanged at different doping levels. The occurrence of the $\mathrm{Cu}{\mathrm{O}}_{2}$ superstructure is constrained in the surface region and its formation is found to link with oxygen intake that serves as the doping agent of holes in the epitaxial films.
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