Nanoscale self-affine surface smoothing by ion bombardment

D. K. Goswami,B. N. Dev
DOI: https://doi.org/10.1103/PhysRevB.68.033401
2002-12-23
Abstract:Topography of silicon surfaces irradiated by a 2 MeV Si$^+$ ion beam at normal incidence and ion fluences in the range $10^{15}-10^{16}$ ions/cm$^{2}$ has been investigated using scanning tunneling microscopy. At length scales below $\sim$~50 nm, surface smoothing is observed; the smoothing is more prominent at smaller length scales. The smoothed surface is self-affine with a scaling exponent $\alpha=0.53\pm0.02$.
Materials Science
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the evolution of the surface topography of solids under ion - beam bombardment, especially the surface smoothing phenomenon and its self - affine characteristics when ions are incident at near - perpendicular angles. Specifically, the authors experimentally studied the surface smoothing phenomenon at different length scales when a 2 MeV Si+ ion beam bombarded the silicon surface in the normal direction, and analyzed the physical mechanism behind this smoothing phenomenon. ### Research Background and Problems 1. **Fundamental Problems in Materials Science** - The influence of particle radiation on the solid surface is an important research topic. During ion - beam bombardment, the change in surface roughness is determined by the competition between surface roughening caused by sputtering and smoothing caused by surface diffusion. - This competitive process can produce characteristic surface structures, such as quasi - periodic ripples and self - affine topologies. 2. **Limitations of Existing Research** - Most studies on ion - beam bombardment focus on cases where the ion energy is high and the incident angle is oblique. Under these conditions, the surface mainly exhibits roughening. - There are relatively few studies on surface smoothing caused by ion beams, and especially the research on the scaling properties of the smoothed surface is even more lacking. ### Research Objectives - **Observe and Characterize the Surface Smoothing Phenomenon** - Study the changes in surface topography after a 2 MeV Si+ ion beam bombards the silicon surface in the normal direction by using a scanning tunneling microscope (STM). - Pay special attention to the surface smoothing phenomenon at length scales less than 50 nm. - **Determine the Self - affine Characteristics** - Calculate and analyze the change of surface roughness with the horizontal sampling length, and determine the self - affine characteristics of the surface and its scaling index α. ### Main Findings - **Surface Smoothing Phenomenon** - An obvious surface smoothing phenomenon was observed at length scales less than 50 nm. - The smoothing phenomenon is more significant at smaller length scales. - **Self - affine Characteristics** - The change of surface roughness σ with the horizontal sampling length L conforms to the self - affine characteristics, that is, \(\sigma\propto L^{\alpha}\), where the scaling index \(\alpha = 0.53\pm0.02\). ### Physical Mechanisms - **Low Sputtering Yield** - Due to high - energy ions (2 MeV) and normal incidence, the sputtering yield is very low (< 0.2 atoms/ion), so the surface erosion is not obvious. - **Collision - Induced Atomic Displacement** - A large number of low - energy (< 4.7 eV) atoms generated by the collision between ions and surface atoms cannot escape from the surface, but can move parallel to the surface, resulting in effective surface diffusion and smoothing. ### Conclusions - This study systematically characterized for the first time the surface smoothing phenomenon and its self - affine characteristics when a high - energy ion beam bombards the silicon surface in the normal direction. - This finding is of great significance for the surface treatment of nanostructured devices and may be used to reduce the surface roughness of nanostructured devices, thereby improving their performance. ### Future Research Directions - Further theoretical research is needed to explain the observed value of the scaling index α, especially in the case where surface diffusion is dominant. - The surface dynamics model under high - energy ion bombardment needs to consider the influence of the energy release depth on surface atoms.