Interface microstructures in the wetting of Cu by equiatomic GaInSnBiZn high-entropy alloy

Shirong Zhu,Qiaoli Lin,Likai Yang,Fuxiang Li
DOI: https://doi.org/10.1016/j.mssp.2024.108498
IF: 4.1
2024-05-06
Materials Science in Semiconductor Processing
Abstract:This study investigates the wetting characteristics, interface microstructure evolution of equiatomic GaInSnBiZn HEA on Cu under high vacuum with sessile drop method to extend its electronic packaging applications. Optimal conditions involve a 350 °C temperature maintained for ∼20 min to prevent Bi loss, resulting in a contact angle inversely proportional to temperature and reaching a minimum of ∼15.6°. A dual-layer of Cu 9 Ga 4 and CuGa 2 forms at the HEA/Cu interface, consistent with thermodynamic predictions, featuring lower activation energy and growth driven by bulk alloy diffusion. Base on the interface microstructures, Cu 9 Ga 4 and CuGa 2 act as diffusion barriers, restricting the movement of other elements while promoting the accumulation of Zn at the interface. The wetting mechanism may be determined by the oxide (Cu 2 O) removal reaction (i.e., reaction between Ga and Cu 2 O).
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
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