Effects of nonorthogonality in the time-dependent current through tunnel junctions

J. Fransson,O. Eriksson,I. Sandlov

DOI: https://doi.org/10.1103/PhysRevB.64.153403

2001-11-30

Abstract:A theoretical technique which allows to include contributions from non-orthogonality of the electron states in the leads connected to a tunneling junction is derived. The theory is applied to a single barrier tunneling structure and a simple expression for the time-dependent tunneling current is derived showing explicit dependence of the overlap. The overlap proves to be necessary for a better quantitative description of the tunneling current, and our theory reproduces experimental results substantially better compared to standard approaches.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is that existing theories fail to fully consider the influence of non - orthogonality of electron states when describing the time - dependent current through tunnel junctions. Specifically:

1. **Influence of non - orthogonality**: Traditional methods such as the transfer Hamiltonian assume that the wave functions between subsystems are orthogonal, which is inaccurate in many cases. When there is a significant wave - function overlap between subsystems, this assumption will lead to errors in quantitative description.

2. **Time - dependent tunneling current**: For the time - dependent tunneling current, existing theories do not fully consider the specific contribution of non - orthogonality to the current. Therefore, these theories perform poorly in explaining experimental results, especially the nonlinear behavior in the low - voltage and high - voltage regions.

### Research objectives

The authors aim to develop a new theoretical method to more accurately describe the time - dependent current in tunneling junctions in nanostructures, especially when there is a significant wave - function overlap between subsystems. Specific goals include:

- **Introducing non - orthogonality**: Improve the description of the tunneling current by introducing non - orthogonality, that is, the overlap of wave functions between subsystems.

- **Improving quantitative consistency**: Ensure that the new theory can better agree with experimental results, especially in terms of nonlinear current - voltage characteristics.

### Main achievements

The authors derived a formula (formula (6)) for describing the time - dependent tunneling current in a single - barrier structure and applied it to metal - insulator - metal (MIM) junctions to analyze the influence of the overlap effect on the current. The results show that after considering non - orthogonality, the quantitative consistency between theoretical predictions and experimental results is significantly improved.

### Formula presentation

The expression for the time - dependent tunneling current is:
\[ J_\sigma(t) = - 2e\Re\int V_{LR\sigma}^*(t)\rho_\sigma(\varepsilon_L)\rho_\sigma(\varepsilon_R)\]
\[ \times\int_{-\infty}^{t}V_{LR\sigma}(t_1)[f(\varepsilon_R)-f(\varepsilon_L)]e^{-i\int_{t_1}^{t}(eV(t_2)+(\varepsilon_L-\varepsilon_R))dt_2}dt_1d\varepsilon_Ld\varepsilon_R.\]

where:
- \( V_{LR\sigma}(t) \) is a mixing term, representing the tunneling coupling between different subsystems.
- \( O^{-1}_{LR} \) is the inverse element of the overlap matrix.
- \( \rho_\sigma(\varepsilon) \) is the electron state density with spin \(\sigma\).
- \( f(\varepsilon) \) is the Fermi - Dirac distribution function.

By introducing non - orthogonality, this formula can more accurately describe the behavior of the tunneling current, especially the nonlinear characteristics in the low - voltage and high - voltage regions.