Gallium Arsenide‐Based Active Antennas for Optical Communication Photodetection with Robustness to Voltage and Temperature

Ching‐Che Lin,Bo‐Jyun Chang,Szu‐Hung Chen,Keng‐Te Lin,Sih‐Wei Chang,Wei‐Yu Chen,Bo‐Yi Chen,Ming‐Chen Liu,Hsuen‐Li Chen

DOI: https://doi.org/10.1002/adom.202100165

IF: 9

2021-05-05

Advanced Optical Materials

Abstract:<p>Although gallium arsenide (GaAs) is one of the most commonly used semiconductor substrate materials, its intrinsic bandgap of 1.42 eV hinders the use of GaAs photodetectors for optical communication. In this study, hot‐electron‐based GaAs active antenna devices are demonstrated, displaying photoresponses well below the bandgap at the telecommunication wavelengths. Using a deep‐trench/thin metal (DTTM) active antenna, a metallic plasmonic structure, high photoresponsivities are achieved under zero bias at wavelengths of 1310 and 1550 nm. Even though the resistance of the semi‐insulating GaAs substrate is approximately 10⁶ times larger than that of the n‐type silicon (Si) substrate, the photoresponsivities are commensurate with most previously reported hot‐electron n‐Si‐based photodetectors operating at communication wavelengths. Furthermore, the devices can be operated under a reverse‐biased voltage with significant enhancements in the photoresponsivities; the highest photoresponsivity (19.96 mA W⁻¹ at 1310 nm) is greater than those reported in all previous studies. Moreover, these GaAs‐based devices are sufficiently robust to be operated over a wide range of operating temperatures (from <b>−</b>193 to <b>+</b>200 <b>°</b>C) while displaying a relatively large bandgap, low dark leakage currents, and high electron mobilities at low temperature. Because these devices can operate at high and low temperatures and at large voltage biases, they are suitable for use under harsh environmental conditions.</p>

materials science, multidisciplinary,optics

What problem does this paper attempt to address?

The problems that this paper attempts to solve are as follows: Due to their inherent band - gap limitations, traditional short - wave infrared (SWIR) photodetectors based on silicon (Si) and gallium arsenide (GaAs) are difficult to detect photons below the band - gap energy, especially performing poorly at O - band (1,310 nm) and C - band (1,550 nm) communication wavelengths. In addition, existing commercial SWIR photodetectors (such as InGaAs - based materials) show excellent photoreactivity, but their performance is limited in high - temperature environments, and their manufacturing processes are complex and costly.

To solve these problems, this research proposes an active antenna device based on gallium arsenide (GaAs), which expands the light - detection ability of GaAs at communication wavelengths by introducing the hot - electron mechanism and surface plasmon resonance (SPR) effect. Specifically, the research team designed an active antenna with a deep - trench/thin - metal (DTTM) structure, which can achieve efficient photoreponse at zero bias voltage and shows good stability and low dark - current characteristics in a wide temperature range (from - 193°C to + 200°C).

### Main problem summary:
1. **Band - gap limitation**: Traditional Si and GaAs materials, due to their inherent band - gaps (Si: 1.12 eV, GaAs: 1.42 eV), are difficult to detect photons below these band - gap energies, limiting their applications at SWIR communication wavelengths.
2. **High - temperature performance**: Existing commercial InGaAs photodetectors have limited performance in high - temperature environments and usually can only work in the range from - 40°C to + 80°C.
3. **Manufacturing complexity**: The manufacturing processes of existing SWIR photodetectors are complex and costly, resulting in limited applications.

### Solutions:
- **Hot - electron mechanism**: By designing the metal - semiconductor (M/S) interface and using the hot - electron injection mechanism, GaAs can generate photocurrent under photons below its band - gap energy.
- **Surface plasmon resonance (SPR)**: Introduce the DTTM structure and use the SPR effect to enhance light absorption, thereby improving photoreactivity.
- **Wide - temperature - range operation**: Optimize the device structure so that it can maintain high performance and low dark current in a wide temperature range.

### Formula representation:
- The photocurrent generated by hot - electron injection is defined as:
\[
I_{\text{photo}} = I_{\text{light}} - I_{\text{dark}}
\]
where \( I_{\text{light}} \) and \( I_{\text{dark}} \) are the currents under illumination and in the dark, respectively.

- The photovoltage is defined as:
\[
V_{\text{photo}} = V_{\text{light}} - V_{\text{dark}}
\]
where \( V_{\text{light}} \) and \( V_{\text{dark}} \) are the voltages under illumination and in the dark, respectively.

- The I - V characteristics of a Schottky diode can be expressed in the dark as:
\[
I_{\text{dark}} = I_{\text{sat}} \left( \exp \left( \frac{qV_{\text{bias}}}{nkT} \right) - 1 \right)
\]
and in the illumination as:
\[
I_{\text{light}} = I_{\text{sat}} \left( \exp \left( \frac{qV_{\text{bias}}}{nkT} \right) - 1 \right) + I_{\text{photo}}
\]

Through these methods, the research team has successfully developed a GaAs - based photodetector that can work efficiently at communication wavelengths and has good high - temperature stability and wide - temperature - range operation capabilities.