Alternating Bias Assisted Annealing of Amorphous Oxide Tunnel Junctions
David P. Pappas,Mark Field,Cameron Kopas,Joel A. Howard,Xiqiao Wang,Ella Lachman,Lin Zhou,Jinsu Oh,Kameshwar Yadavalli,Eyob A. Sete,Andrew Bestwick,Matthew J. Kramer,Joshua Y. Mutus
DOI: https://doi.org/10.1038/s43246-024-00596-z
2024-08-16
Abstract:We demonstrate a transformational technique for controllably tuning the electrical properties of fabricated thermally oxidized amorphous aluminum-oxide tunnel junctions. Using conventional test equipment to apply an alternating bias to a heated tunnel barrier, giant increases in the room temperature resistance, greater than 70%, can be achieved. The rate of resistance change is shown to be strongly temperature-dependent, and is independent of junction size in the sub-micron regime. In order to measure their tunneling properties at mK temperatures, we characterized transmon qubit junctions treated with this alternating-bias assisted annealing (ABAA) technique. The measured frequencies follow the Ambegaokar-Baratoff relation between the shifted resistance and critical current. Further, these studies show a reduction of junction-contributed loss on the order of $\approx 2 \times10^{-6}$, along with a significant reduction in resonant- and off-resonant-two level system defects when compared to untreated samples. Imaging with high-resolution TEM shows that the barrier is still predominantly amorphous with a more uniform distribution of aluminum coordination across the barrier relative to untreated junctions. This new approach is expected to be widely applicable to a broad range of devices that rely on amorphous aluminum oxide, as well as the many other metal-insulator-metal structures used in modern electronics.
Applied Physics,Materials Science,Superconductivity,Quantum Physics