Discrete saturation thickness and anomalous potential height of native ultrathin aluminum oxide tunnel barriers

K. Gloos,P.J. Koppinen,J.P. Pekola

DOI: https://doi.org/10.48550/arXiv.cond-mat/0105511

2001-05-27

Abstract:We have investigated planar metal - insulator - metal tunnel junctions with aluminum oxide as dielectricum. These oxide barriers were grown on an aluminum electrode in pure oxygen at room temperature till saturation. We observed discrete barrier widths separated by \Delta s \approx 0.38 nm, corresponding to the addition of one layer of oxygen atoms. The minimum thickness of s_0 \approx 0.54 nm is due to a double layer of oxygen. We found a strong and systematic dependence of the barrier height \Phi_0 on the thickness s like \Phi_0 \approx 2.5 eV / s^2(nm), which nearly coincides with the kinetic electron energy E = h^2/2ms^2 for which the deBroglie wavelength matches the width of the barrier.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is about the intrinsic properties of ultrathin aluminum oxide tunnel barriers, especially their discrete saturation thickness and abnormal barrier height. Specifically, the authors studied the properties of aluminum oxide as an insulating layer in planar metal - insulator - metal (MIM) tunnel junctions. They focused on the following aspects:

1. **Discrete barrier width**: The barrier widths observed in the experiments showed a discrete distribution. Each time an oxygen atom layer was added, the width increased by approximately \( \Delta s \approx 0.38 \, \text{nm} \). The minimum thickness was approximately \( s_0 \approx 0.54 \, \text{nm} \), corresponding to double - layer oxygen atoms.

2. **Relationship between barrier height and thickness**: The barrier height \( \Phi_0 \) showed a strong systematic dependence on the thickness \( s \), with the relationship approximately being \( \Phi_0 \propto \frac{1}{s^2} \), and this relationship almost matched the kinetic energy of electrons \( E=\frac{\hbar^2}{2ms^2} \), where \( \hbar \) is the reduced Planck constant and \( m \) is the electron mass.

3. **Challenges to the traditional view**: The traditional view holds that the barrier height of aluminum oxide is approximately 2 eV, but the experimental data indicate that this height can vary between 0.1 eV and 8.6 eV. In addition, the dielectric constant \( \epsilon \) also shows a large uncertainty.

### Main findings

- **Relationship between barrier height and thickness**: The barrier height \( \Phi_0 \) is inversely proportional to the square of the thickness \( s \), that is, \( \Phi_0 \approx 2.5 \, \text{eV} / s^2 \) (unit: nm). This indicates that the barrier height is not determined by the band gap of the bulk material but is a purely geometric effect.

- **Discrete thickness distribution**: The barrier thickness shows a discrete distribution, with a spacing of approximately \( \Delta s \approx 0.38 \, \text{nm} \), corresponding to the addition of one oxygen atom layer each time.

- **Minimum thickness**: The minimum thickness \( s_0 \approx 0.54 \, \text{nm} \) corresponds to double - layer oxygen atoms, and this result is consistent with theoretical predictions and other experimental observations.

Through these studies, the authors hope to gain a deeper understanding of the intrinsic physical mechanisms of aluminum oxide tunnel barriers and provide more accurate design bases for future applications.