Difference between chemical structures of the interface at the Al-oxide tunneling barrier prepared by plasma or by radical oxidation
Jongill Hong,Donkoun Lee,Yoonsung Han,Kyenam Lee,Inwoo Jang,Youngjin Park,Min Kyu Lee,Ha Jin Song,Hyun-Joon Shin,Koji Tsunekawa,Naoki Watanabe
DOI: https://doi.org/10.1016/j.apsusc.2007.03.072
IF: 6.7
2007-07-01
Applied Surface Science
Abstract:We have studied chemical structures of the interface between the Al-oxide tunneling barrier and the underlying Co90Fe10 layer in magnetic tunnel junctions when a 1-nm thick metallic Al barrier was oxidized by two different methods: plasma oxidation and radical oxidation. Our chemical analyses confirmed that the underlying CoFe layer was unavoidably attacked by oxygen during the oxidation and that this left different oxide states at the AlOx/CoFe interface, depending on the oxidation method. The radical oxidation required long oxidation time for optimizing tunneling performance and resulted in a large amount of oxygen at the interface, which, in turn, resulted in the formation of mostly α-Fe2O3 and Al2O3. Conversely, the plasma oxidation required a relatively short oxidation time for optimization and left FeO as a dominant phase at the interface. Our results also show that the thermal treatment helped AlOx, an oxygen-deficient phase, to be re-oxidized and transformed into Al2O3, the thermodynamically stable stoichiometric phase. The oxygen that diffused from the reduced CoFe layer into the barrier is likely responsible for this oxygen enrichment. We show that such differences in the chemical structure of the interface are critical clues to understanding what causes the change in tunneling properties of magnetic tunnel junctions.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films