Abstract:IGZO oxide semiconductors promising as next‐generation 2T0C DRAM architectures increase oxygen vacancy when gamma‐ray are irradiated, resulting in increased instability of IGZO films. The full range DOS of IGZO TFTs changed from gamma‐rays is investigated by the proposed observation method based on the multi‐wavelength light source, which is verified by TCAD simulation. The amorphous In─Ga─Zn─O (a‐IGZO) thin film transistors (TFTs) have attracted attention as a cell transistor for the next generation DRAM architecture because of its low leakage current, high mobility, and the back‐end‐of‐line (BEOL) compatibility that enables monolithic 3D (M3D) integration. IGZO‐based electronic devices used in harsh environments such as radiation exposure can be vulnerable, resulting in functional failure. Here, the behavior of subgap density‐of‐states (DOS) over full subgap range according to the impactful gamma‐ray irradiation in a‐IGZO TFTs is investigated by employing DC current–voltage (I−V) data with multiple‐wavelength light sources. To understand the origins of the radiation effect, IGZO films have been also analyzed by x‐ray photoelectron spectroscopy (XPS). Considering in‐depth electrical and chemical analysis, the unexpected increase of subthreshold leakage current caused by total ionizing dose (TID) is strongly correlated with newly discovered deep‐donor states (gDDγ(E) ) at the specific energy level. In particular, oxygen vacancies caused by the gamma‐ray irradiation give rise to undesirable electrical characteristics such as hysteresis effect and negative shift of threshold voltage (VT). Furthermore, the TCAD simulation results based on DOS model parameters are found to exhibit good agreement with experimental data and plausible explanation including (gDDγ(E) ).

Investigation of low to high-dose gamma-ray (γ-ray) radiation effects on indium-zinc-oxide (IZO) thin film transistor (TFT)

Direct Observation for Distinct Behaviors of Gamma‐Ray Irradiation‐Induced Subgap Density‐of‐States in Amorphous InGaZnO TFTs by Multiple‐Wavelength Light Source

Rapid Thermal Annealing under O2 Ambient to Recover the Deterioration by Gamma-Ray Irradiation in a-IGZO TFTs

Robust Stability of Optical and Electronic Properties of Gallium‐Doped Zinc Oxide Thin Films to Gamma Ray Irradiation

Radiation Effects in Printed Flexible Single-Walled Carbon Nanotube Thin-Film Transistors

Impact of pre-annealing process on electrical properties and stability of indium zinc oxide thin-film transistors

Influence of RF power in the sputter deposition of amorphous InGaZnO film on the transient drain current of amorphous InGaZnO thin-film transistors

N-channel polysilicon thin film transistors as gamma-ray detectors

Investigation of the I–V characteristics of n+/n homojunctions introduced by heavy ion irradiation in CdZnTe crystals

Effects of low‐temperature thermal annealing on interface characteristics in IZO/IGZO dual‐channel thin‐film transistors

Effects of iodine doping on structural and electrical characteristics of solution-processed indium oxide thin-film transistors and its potential application for iodine sensing

Performance Improvements of Igzo and Zno Thin-Film Transistors by Laser-Irradiation Treatment

Effects of high-dose gamma-ray irradiation on an In0.53Ga0.47As high electron mobility transistor

High-energy X-Ray Radiation Effects on the Exfoliated Quasi-Two-dimensional Β-Ga2o3 Nanoflake Field-Effect Transistors

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric

X-ray irradiation-induced degradation in Hf0.5Zr0.5O2 fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors

Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

Performance Analysis of Gamma-Ray-Irradiated Color Complementary Metal Oxide Semiconductor Digital Image Sensors

Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation

Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing