Abstract:Recently, significant attention has been directed towards two-dimensional Janus materials owing to their unique structure and novel properties. In this work, we have introduced novel two-dimensional Janus monolayers, SZrAZ 2 (A = Si, Ge; Z = P, As), through first principles. Our primary focus was the investigation of the controllable electronic properties exhibited by the Janus SZrAZ 2 structures under the influence of strain and an external electric field. Our research findings indicate the dynamic and thermodynamic stability of Janus SZrAZ 2 (A = Si, Ge; Z = P, As) monolayers. In the equilibrium state, these monolayers exhibit properties of an indirect band gap semiconductor. When subjected to biaxial strain and an external electric field, we observed that the dependency of SZrSiAs 2 and SZrGeAs 2 monolayers on an external electric field is very weak. Their electronic properties can only be modulated by applying biaxial strain. For SZrSiP 2 and SZrGeP 2 monolayers, their electronic properties can be modulated under biaxial strain and an external electric field, resulting in a transition from semiconducting to metallic behavior. Finally, we calculated the carrier mobility of these four structures and observed that the SZrGeAs 2 monolayer exhibits a hole mobility of up to 597.52 cm 2 s −1 V −1 in the x -direction, whereas the SZrSiP 2 monolayer demonstrates an electron mobility of up to 479.30 cm 2 s −1 V −1 in the y -direction. In the x -direction, the electron mobility of SZrSiAs 2 and SZrGeP 2 monolayers was measured to be 189.88 and 528.44 cm 2 s −1 V −1 , respectively. These values are greater than or equivalent to that of experimentally synthesized MoS 2 (∼200 cm 2 s −1 V −1 ). Our research lays the foundation for utilizing two-dimensional Janus materials in electronic devices.

First-principles study of strain effect on elastic and optical properties and lattice thermal conductivity of Janus ZrBrCl monolayer

Quasiparticle Band Structures And Optical Properties Of Monolayer Zrnx (X=Cl, Br, I) Under Exciton Effect

Strain tuning of the electronic structure and optical properties of novel Janus MgBrI monolayer: Insights from first-principles calculations

Effect of Mechanical Strain on the Optical Properties of Nodal‐Line Semimetal ZrSiS

Study on the piezoelectric properties and the mechanism of strain-regulated piezoelectricity in flexible Janus monolayers Cr2X3Y3 (X/Y=Cl, Br,I)

Strain-Tuned Structural, Mechanical and Electronic Properties of Two-Dimensional Transition Metal Sulfides ZrS2: A First Principles Study1

Strain-tuned mechanical, electronic, and optoelectronic properties of two-dimensional transition metal sulfides ZrS2: a first-principles study

Strain engineering the structures and electronic properties of Janus monolayer transition-metal dichalcogenides

Room Temperature Bound Excitons and Strain-Tunable Carrier Mobilities in Janus Monolayer Transition-Metal Dichalcogenides.

Enhanced Thermoelectric Properties of 2D Janus Ferromagnetic LaBrI with Strain-induced Valley Degeneracy

Indirect-to-direct band gap transition of the ZrS2 monolayer by strain: first-principles calculations

Strain Tunable Thermoelectric Material: Janus ZrSSe Monolayer

Electronic and thermoelectric properties of Janus AsSeX (X = Cl, Br, I) monolayers: A first-principles study

Strain-induced modification in thermal properties of monolayer 1 T-ZrS2 and ZrS2/ZrSe2 heterojunction

Mechanical Behaviors in Janus Transition-Metal Dichalcogenides: A Molecular Dynamics Simulation

Tuning the electronic structures and transport coefficients of Janus PtSSe monolayer with biaxial strain

Dirac-like Band Structure and Strain-Tunable Electronic Structure of Zr2CCl2 Monolayer

First-principles calculations on the mechanical, electronic, magnetic and optical properties of two-dimensional Janus Cr$_2$TeX (X= P, As, Sb) monolayers

Mechanical and electronic properties of Janus monolayer transition metal dichalcogenides

Tuning of the electronic, photocatalytic and optical properties of Janus XWAZ 2 (X = S, Se, Te; A = Si, Ge; Z = N, P, As) monolayers via strain and external electric field

Strain and electric field induced electronic property modifications in two-dimensional Janus SZrAZ 2 (A = Si, Ge; Z = P, As) monolayers