Abstract:Two-dimensional (2D) transition-metal dichalcogenides (TMDs) are new crystalline materials with exotic electronic, mechanical, and optical properties. Due to their inherent exceptional mechanical strength, these 2D materials provide us the best platform for strain engineering. In this study, we have performed first-principles calculations to study the effect of uniaxial strains on the electronic, magnetic, and mechanical properties of transition-metal dichalcogenides (TMDs) MX2 (where M = Cr, Mo, W and X = S, Se), monolayers (2D), and armchair and zigzag nanoribbons (1D). For the mechanical strength, we determined the tensile strength (σ) and Young's modulus (Y) and observed that σ and Y are higher in monolayers (most in WS2ML) as compared to nanoribbons where monolayers resist tension up to 25-28% strain while nanoribbons (armchair and zigzag) can be only up to 5-10%. Deformation potential (Δ p ) in the linear regime near the equilibrium position(ϵ < 2%) has also been calculated, and its effect on monolayers is observed less as compared to nanoribbons. In addition, unstrained nonmagnetic monolayers are direct band gap semiconductors (D) which changed to indirect band gap semiconductors (I) with the application of strain. Ferromagnetic states of metallic zigzag nanoribbons (including up spin channel of 7-CrS2NR and 7-CrSe2NR) are greatly affected by strain and show half-metal-like behavior in different strain range. The magnetic moment (μ) that is predominantly observed in zigzag nanoribbons is 2 times higher than that of other nanoribbons. This magnetism in nanoribbons is mostly caused by transition-metal atoms (M = Cr, Mo, W). Thus, our study suggests that strain engineering is the best approach to modify or control the structural, electronic, magnetic, and mechanical properties of the TMD monolayer and nanoribbons which, therefore, open their potential applications in spintronics, photovoltaic cells, and tunneling field-effect transistors.

Mechanical and electronic properties of Janus monolayer transition metal dichalcogenides

Mechanical Behaviors in Janus Transition-Metal Dichalcogenides: A Molecular Dynamics Simulation

First-principles study of mechanical, electronic and optical properties of Janus structure in transition metal dichalcogenides

Strain engineering the structures and electronic properties of Janus monolayer transition-metal dichalcogenides

First-principles calculations on the mechanical, electronic, magnetic and optical properties of two-dimensional Janus Cr$_2$TeX (X= P, As, Sb) monolayers

Mechanical Properties of Monolayer Ternary Transitional Metal Dichalogenides MoS2xTe2(1 − X): A Molecular Dynamics Study

First-principles Calculations on the Mechanical, Electronic, Magnetic and Optical Properties of Two-Dimensional Janus Cr_2TeX (X= P, As, Sb) Monolayers

Room Temperature Bound Excitons and Strain-Tunable Carrier Mobilities in Janus Monolayer Transition-Metal Dichalcogenides.

First Principles Study of Structural, Vibrational and Electronic Properties of Graphene-Like MX2 (m=mo, Nb, W, Ta; X=S, Se, Te) Monolayers

Tunable electronic properties of two-dimensional transition metal dichalcogenide alloys: A first-principles prediction

The mechanical, electronic and optical properties of two-dimensional transition metal chalcogenides MX2 and M2X3 (M = Ni, Pd; X = S, Se, Te) with hexagonal and orthorhombic structures

Raman spectrum of Janus transition metal dichalcogenide monolayers WSSe and MoSSe

The electronic structure and elastic property of monolayer and bilayer transition metal dichalcogenides MX$_2$ (M=Mo,W;X=O,S,Se,Te): A comparative first-principles study

Janus two-dimensional transition metal dichalcogenides

The structural, mechanical, electronic, and optical properties of Janus Hf2CXY (X, Y = O, S, Se or Te, X ≠ Y) MXenes

First-Principles Study of Structural and Electronic Properties of Monolayer PtX2 and Janus PtXY (X, Y = S, Se, and Te) via Strain Engineering

Mechanical properties of lateral transition metal dichalcogenide heterostructures

Intrinsic and Anisotropic Rashba Spin Splitting in Janus Transition-Metal Dichalcogenide Monolayers

Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors

Electronic Band Gap Tuning and Calculations of Mechanical Strength and Deformation Potential by Applying Uniaxial Strain on MX2 (M = Cr, Mo, W and X = S, Se) Monolayers and Nanoribbons

Novel Janus monolayer 1T'-MoSF features robust stability and superior mechanical flexibility