Unipolar spin diodes and transistors

M. E. Flatte,G. Vignale

DOI: https://doi.org/10.1063/1.1348317

2000-12-28

Abstract:Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p-n diode and the bipolar (junction) transistor. Such devices may be applicable for magnetic sensing, nonvolatile memory, and reprogrammable logic.

Materials Science

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: **How to use ferromagnetic semiconductor materials to construct unipolar spin diodes and triodes, and make their behaviors similar to those of traditional non - magnetic bipolar devices (such as p - n diodes and bipolar junction transistors), so as to be applied in magnetic sensing, non - volatile memories and reprogrammable logic circuits.**

Specifically, the author explores the following points:

1. **Application of new materials**: Ferromagnetic semiconductor materials have variable magnetization directions, and these materials can be used to construct unipolar spin diodes and triodes. Compared with traditional metal - based magnetoelectronic devices, these devices have potential performance advantages.

2. **Device structure and working principle**:
- **Spin diode**: It is composed of two layers of ferromagnetic semiconductors, and the majority - carrier spin polarization directions of these two layers are opposite. This structure is similar to metal - based magnetic tunnel junction (MTJ) devices.
- **Spin triode**: It is composed of three layers of ferromagnetic semiconductors, and the majority - carrier spin polarization directions of these three layers are arranged alternately. This structure is similar to traditional bipolar junction transistors.

3. **Non - linear transmission characteristics**: The non - linear transmission characteristics of these devices are studied, especially the behavior of charge currents. Since the I - V characteristics of these devices are essentially non - linear, they can exhibit new operation modes in reprogrammable logic, non - volatile memories and magnetic sensing.

4. **Magnetic sensitivity and current gain**: The charge - current gain in spin triodes and its sensitivity to magnetic fields are mainly discussed. By changing the magnetic field, the performance of these devices can be significantly affected, making them suitable for magnetic sensing applications.

5. **Theoretical models and assumptions**: The article also analyzes in detail the current - voltage characteristics of these devices and verifies the applicability of some basic assumptions (such as Shockley assumptions) in spin diodes and triodes.

In summary, this paper aims to explore the application potential of ferromagnetic semiconductor materials in new magnetoelectronic devices, especially how to achieve high - performance magnetic sensing, non - volatile memories and reprogrammable logic circuits by regulating spin polarization.