Strong Effects of Weak Localization in Charge Density Wave/Normal Metal Hybrids

Mark I. Visscher,Behzad Rejaei,Gerrit E.W. Bauer

DOI: https://doi.org/10.1103/PhysRevB.62.6873

2000-05-15

Abstract:Collective transport through a multichannel disordered conductor in contact with charge-density-wave electrodes is theoretically investigated. The statistical distribution function of the threshold potential for charge-density wave sliding is calculated by random matrix theory. In the diffusive regime weak localization has a strong effect on the sliding motion.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **The influence of weak localization effect on collective transport in charge - density - wave (CDW)/normal - metal hybrid structures**.

Specifically, the authors studied the strong influence of the weak localization effect on the charge - density - wave sliding motion in the case of a multi - channel disordered conductor in contact with a charge - density - wave electrode. They calculated the statistical distribution of pinning energy in the presence and absence of time - reversal symmetry through random matrix theory and explored how these effects affect the threshold electric potential of the system.

### Main problems:
1. **The influence of weak localization effect on charge - density - wave sliding**: The paper studied the influence of weak localization effect on the sliding of charge - density - wave (CDW), especially in multi - channel disordered conductors.
2. **Statistical distribution of threshold electric potential**: The authors calculated the statistical distribution of threshold electric potential in the presence and absence of time - reversal symmetry through random matrix theory.
3. **Magnetoresistance effect**: The paper also discussed that when time - reversal symmetry is broken (for example, when a magnetic field is applied), the system exhibits a significant negative magnetoresistance effect.

### Key formulas:
- The expression for the threshold electric potential \(\mu_T\) is:
\[
\mu_T=\frac{\Delta}{N\gamma}\left|\text{Tr}(r' - r^\dagger)\right|
\]
where \(r'\) and \(r\) are the reflection matrices of the disordered region, \(\Delta\) is the energy gap of the charge - density - wave, \(N\) is the number of chains, and \(\gamma\) is the electron - phonon coupling constant.

- The mean square value of the threshold electric potential:
\[
\langle\mu_T^2\rangle=\frac{2\Delta^2}{N^2\gamma^2}\left(\frac{s}{s + 1}\right)
\]
where \(s = L/l\) is the ratio of the length of the disordered conductor to the mean free path.

- The probability distribution function of the threshold electric potential:
\[
P^{(β)}_I(\mu_T)=\frac{2β\mu_T}{\langle\mu_T^2\rangle}e^{-β\mu_T^2/\langle\mu_T^2\rangle}
\]

### Conclusion:
The influence of the weak localization effect on normal conductivity is weak, but it has a significant influence on the threshold electric potential. Applying a magnetic field to break time - reversal symmetry will significantly reduce the threshold electric potential, resulting in a negative magnetoresistance effect. In addition, the results of the paper support the related work on the periodicity of Aharonov - Bohm oscillations and explain the phenomena observed in experiments.