Alberto Hijano,Stefan Ilić,F. Sebastián Bergeret
Abstract:We present a theory of weak localization (WL) in the presence of generic spin-dependent fields, including any type of spin-orbit coupling, Zeeman fields, and non-homogeneous magnetic textures. We go beyond the usual diffusive approximation, considering systems with short-range disorder of arbitrary strength, and obtain a compact expression for the weak localization (WL) correction to the conductivity in terms of the singlet-triplet polarization operator in momentum space. The latter can be directly related to the solution of the quasiclassical Eilenberger equation for superconducting systems. This formulation presents an intuitive framework to explore how the interplay of various spin-dependent fields drives weak (anti) localization. We apply our results to study in-plane magnetoconductivity in systems with spin-orbit coupling, and in newly discovered altermagnets. Our results enable straightforward calculation of the WL conductivity at arbitrary disorder strength, which can be particularly useful for interpreting experiments on high-mobility samples.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is how weak localization (WL) affects electrical conductivity in the presence of disorder of arbitrary strength and various spin - related fields (such as spin - orbit coupling, Zeeman field, and inhomogeneous magnetic structures). Specifically, the author aims to go beyond the traditional diffusion approximation, study the impact of short - range disorder on weak (anti)localization, and provide a compact expression to describe the correction of electrical conductivity by weak localization given by the singlet - triplet polarization operator in momentum space.
### Main problem decomposition
1. **Interaction between weak localization and spin - related fields**:
- The author hopes to understand how different types of spin - related fields (e.g., spin - orbit coupling, Zeeman field, etc.) act together to affect the weak localization phenomenon.
- Specifically, how these spin - related fields change the quantum interference effect of electrons and, in turn, affect electrical conductivity.
2. **Going beyond the diffusion approximation**:
- Traditional theories usually assume that the disorder scattering rate is much larger than other energy scales, that is, in the strong disorder region. However, with the progress of sample preparation techniques, the strength of spin - orbit coupling in high - mobility samples may be significantly larger than the disorder scattering rate.
- Therefore, the author attempts to develop a theoretical framework applicable to arbitrary disorder strength to more accurately describe the weak localization phenomenon.
3. **Application prospects**:
- Provide an intuitive framework to explore how the interaction between different spin - related fields drives weak (anti)localization.
- This theoretical framework is particularly suitable for explaining experimental results in high - mobility samples, especially in in - plane magnetoconductivity measurements.
### Key contributions
- **Compact expression**: The author has derived a compact expression for describing the correction of electrical conductivity by weak localization, which involves the singlet - triplet polarization operator in momentum space.
- **Connection with the Eilenberger equation**: This expression can be directly related to the solution of the quasi - classical Eilenberger equation in superconducting systems, providing a new method for calculating the weak localization effect.
- **Wide applicability**: This theory is applicable not only to two - dimensional and quasi - two - dimensional structures but also to new materials (such as alternating magnets) and in - plane magnetoconductivity measurements.
By solving these problems, this paper provides a powerful theoretical tool for understanding and predicting the weak localization phenomenon in complex spin - related systems, which is helpful for explaining and designing future experimental work.