Multiferroic Tunnel Junctions and ferroelectric control of spins

Qi Li
2014-10-05
Abstract:La0:7Sr0:3MnO3/BaTiO3/La0:5Ca0:5MnO3/La0:7Sr0.3MnO3 tunnel junctions where the La0:5Ca0:5MnO3 is the interface phase transition layer. We have found that the TER has increased from 30% (without La0:5Ca0:5MnO3 layer) to 10,000% (with the inserted interface layer).1 The mechanisms of such large enhancement of TER come from two sources: one is the metal to insulator transition of the La0.5Ca0.5MnO3 which effectively change the barrier width for the two polarization states and the other is the polarization driven magnetic phase transition of La0:5Ca0:5MnO3 from ferromagnetic to antiferromagnetic state. The antiferromagnetic phase in the barrier acted as a spin valve for spin polarized tunneling current. The ferroelectric control of the interface magnetic states have been further confirmed in magnetic field dependence of the TER and magnetic second harmonic generation. Details of the experimental results and the comparison with first principles calculation will be discussed. The results have also shown that the tunneling magnetoresistance can be turned on and off with ferroelectric polarization reversal of the barrier.
Materials Science
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