Abstract:The effect of dislocations on the chemical, electrical and transport properties in oxide materials is important for electrochemical devices, such as fuel cells and resistive switches, but these effects have remained largely unexplored at the atomic level. In this work, by using large-scale atomistic simulations, we uncover how a < 100 >{011} edge dislocation in SrTiO3, a prototypical perovskite oxide, impacts the local defect chemistry and oxide ion transport. We find that, in the dilute limit, oxygen vacancy formation energy in SrTiO3 is lower at sites close to the dislocation core, by as much as 2 eV compared to that in the bulk. We show that the formation of a space-charge zone based on the redistribution of charged oxygen vacancies can be captured quantitatively at atomistic level by mapping the vacancy formation energies around the dislocation. Oxide-ion diffusion was studied for a low vacancy concentration regime (ppm level) and a high vacancy concentration regime (up to 2.5%). In both cases, no evidence of pipe-diffusion, i.e., significantly enhanced mobility of oxide ions, was found as determined from the calculated migration barriers, contrary to the case in metals. However, in the low vacancy concentration regime, the vacancy accumulation at the dislocation core gives rise to a higher diffusion coefficient, even though the oxide-ion mobility itself is lower than that in the bulk. Our findings have important implications for applications of perovskite oxides for information and energy technologies. The observed lower oxygen vacancy formation energy at the dislocation core provides a quantitative and direct explanation for the electronic conductivity of dislocations in SrTiO3 and related oxides studied for red-ox based resistive switching. Reducibility and electronic transport at dislocations can also be quantitatively engineered into active materials for fuel cells, catalysis, and electronics.

Tunable Oxygen Diffusion and Electronic Conduction in SrTiO3 by Dislocation‐Induced Space Charge Fields

Dislocations In Srtio3: Easy To Reduce But Not So Fast For Oxygen Transport

Preferential chemical oxygen diffusion along dislocation networks in SrTiO3

Conceptual Framework for Dislocation-Modified Conductivity in Oxide Ceramics Deconvoluting Mesoscopic Structure, Core, and Space Charge Exemplified for SrTiO 3

Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

Enhanced Photoconductivity at Dislocations in SrTiO3

Conceptual Framework for Dislocation-Modified Conductivity in Oxide Ceramics Deconvoluting Mesoscopic Structure, Core, and Space Charge Exemplified for SrTiO3.

Influence of dislocations on thermal conductivity of strontium titanate

Accessible Switching of Electronic Defect Type in SrTiO3 Via Biaxial Strain

Cathodoluminescence study of oxygen vacancy migration along dislocation in SrTiO3

Creation and Modulation of Conductivity in Laser-Irradiated SrTiO3 Single Crystals

Atomic-Scale Measurement of Flexoelectric Polarization at SrTiO_{3} Dislocations.

Tuning oxygen vacancy diffusion through strain in SrTiO$_3$ thin films

Atomic Origin of Ti Deficient Dislocation in SrTiO3 Bicrystal and Their Electronic Structures

Oxygen Vacancy Migration along Dislocations in SrTiO3 Studied by Cathodoluminescence

Atomic Origin of Ti-deficient Dislocation in SrTiO3 Bicrystals and Their Electronic Structures

Structural Properties of Plastically Deformed SrTiO3 and KTaO3

Biaxial Strain-Induced Transport Property Changes in Atomically Tailoredsrtio3-Based Systems

Anisotropic Lattice Strain Induced by the Enhanced Electronic Hybridization in SrTiO3

Origin of Oxygen Partial Pressure-Dependent Conductivity in SrTiO3

Atomic-Scale Analysis of the Oxygen Configuration at A Srtio3 Dislocation Core