Abstract:In growing InGaN/GaN multiple quantum wells (MQWs) with the technique of metal-organic chemical vapor deposition (MOCVD) the introduction of an appropriate amount of H-2 into the N-2 carrier gas for the growth of the GaN barrier layers can effectively improve the crystalline quality of the well/barrier interface and therefore enhance the luminescence efficiency of the quantum wells. In this work, we carried out detailed photoluminescence (PL) spectroscopic measurements on the luminescence properties of InGaN/GaN MQWs in the device structure for blue-light laser diodes, and the effects of H-2 in the carrier gas for GaN barrier growth on the MQWs, including the improved interface quality, the enhanced luminescence and the underlying mechanisms, have been investigated. The PL spectra of the InGaN/GaN MQWs acquired at room temperature reveal that the introduction of 2. 5% H-2 in the N-2 carrier gas leads to increased emission efficiency by 75% , blue-shifted peak energy by 17 meV, and narrowed full width at half maximum (FWHM) by 10 meV. With the PL spectra measured at varied excitation powers, the quantum-confined Stark effect (QCSE) and band-filling effect on the emission performance of the MQWs have been distinguished, and the QCSE effect is found to dominantly determine the emission energy and width, which can be effectively reduced by the introduction of H-2. Upon the complete screening of the QCSE effect, the peak energy of the MQWs emission is located at 2. 75 eV. The dependence of the PL spectra on temperature indicates that the introduced H-2 in the carrier gas can also reduce the carrier localization effect and narrow the energy fluctuation of the well potential, which leads to the narrowed PL spectral width in the samples grown with the mixture of H-2/N-2 carrier gas. The variation of the PL intensity with respect to temperature reveals that the physical nature of the nonradiative recombination centers at the interface is not influenced by the introduction of H-2, but the amount of these centers is greatly reduced, which accounts for the improved emission efficiency. The results of time-resolved PL measurements exhibit that the introduced H-2 in the carrier gas has no impact on the nonradiative recombination lifetime, but causes a shorter radiative recombination lifetime, which further confirms the influences of H-2 introduction on both QCSE screening and nonradiative recombination centers. The in-depth analyses of the PL results have revealed that the introduction of H-2 in the N-2 carrier gas for GaN barrier growth can significantly improve the crystalline quality of InGaN/GaN MQWs and therefore enhance the light emission performance. This work has demonstrated PL spectroscopy as a powerful technique in characterizing the optical properties of semiconductor quantum structures, and the spectral findings could provide helpful insight into the growth of InGaN/GaN MQWs.

Intermedial annealing process applied during the growth of quantum wells and its influence on the performance of GaN-based laser diodes.

Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells

Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes

Influence of p-GaN Annealing on Optical Properties of InGaN MQWs

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Improvement of mid-wave infrared quantum cascade laser epitaxy by studying the effect of thermal annealing on GaInAs/AlInAs superlattice

Effect of Rapid Thermal Annealing on Electron Emission and DX Centers in Strained InGaAs/GaAs Single Quantum Well Laser Diodes

Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

Effects of Photogenerated Carriers in GaN Layers on the Photoluminescence Characteristics of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells

Influence of Indium Composition in the Prestrained Ingan Interlayer on the Strain Relaxation of Ingan/Gan Multiple Quantum Wells in Laser Diode Structures

Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH3 Flux

Fine Photoluminescence Spectroscopic Characterization of Interfacial Effects on Emission Properties of InGaN/GaN Multiple Quantum Wells in a Blue-Light Laser Diode Structure

Performance Enhancement of GaN-Based Laser Diodes with Prestrained Growth

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Influence of P-Gan Annealing on the Optical and Electrical Properties of InGaN/GaN MQW LEDs

InGaAs/AlGaAs MQWs grown by MBE: Optimizing GaAs insertion layer thickness to enhance interface quality and luminescent property

Performance Improvement of Ultraviolet-a Multiple Quantum Wells Using a Vertical Oriented Nanoporous GaN Underlayer.

Atomic-level Quantum Well Degradation of GaN-based Laser Diodes Investigated by Atom Probe Tomography

Effect of Annealing on Photoluminescence and Microstructures of Ingan/Gan Multi-Quantum Well with Mg-Doped P-Type Gan

The Influence Mechanism of Quantum Well Growth and Annealing Temperature on In Migration and Stress Modulation Behavior