Abstract:With the technical breakthroughs of creating oxides by novel thin film deposition techniques with well-defined interfaces, oxides have received increasing attention in the electronic and optoelectronic industry due to their unique com?bination of novel physical properties and the fact that oxides can form “heterostructures” for multiple devices. In order to understand the atomic/electronic structure in oxide interfaces, various characterization techniques have been involved. In the past, the characterization has been limited to broad beam techniques though X?ray absorption spectroscopy ( XAS) , nuclear magnetic resonance ( NMR) to achieve the average physical and chemical information. With techniques such as scanning transmission electron microscopy ( STEM) and electron energy?loss spectroscopy ( EELS) , high?resolution TEM opens the path to the study of chemical composition and bonding information coupled with the atomic level images, and thus provides an ideal tool to investigate individual interface. Interface can?t be physically isolated from the bulk, it is diffi?cult to correctly and effectively extract the weak signal from these interfaces presented in a solid bulk. Such extraction re?mains a very challenging issue even in TEM when thin foils, with thickness less than 100 nm, are used. The visibility of these interfaces can be enhanced by picking up corresponding signals since the elastically scattered electrons contributing to signals from these interfaces are distributed unevenly in space and differently compared to the ones contributed by the bulk. Studying cross?sectional samples provides two?dimensional projected information of the three?dimensional interfacial structures. Accordingly, the atomic structure can be constructed through combining information from different projections. Regarding the fact that EELS signals from the defects and the bulk are distributed similarly in space, a new experimental approach, based on a “thickness” series of EEL spectra containing different bulk contributions, was proposed to effectively extract weak EELS signals from these interfaces. The development of characterization techniques such as TEM has led to improved understanding of oxide interfaces and thus provides great opportunity to create artificial structure for their novel physical properties.

Deep level defect spectroscopies of complex oxide surfaces and interfaces

Defect-driven Selective Metal Oxidation at Atomic Scale.

Atomic Defects in Two‐Dimensional Materials: from Single‐Atom Spectroscopy to Functionalities in Opto‐/Electronics, Nanomagnetism, and Catalysis

Depth-resolved cathodoluminescence spectroscopy study of defects in SrTiO3

Interfacial Defect Complex at the MgO/SrTiO3heterojunction and Its Electronic Impact

Probing and Manipulating the Interfacial Defects of InGaAs Dual-Layer Metal Oxides at the Atomic Scale

Surface Amorphous Oxides Induced Electron Transfer into Complex Oxide Heterointerfaces

The Atomic/Electronic Structure of Oxide Interfaces

Modified Oxygen Defect Chemistry at Transition Metal Oxide Heterostructures Probed by Hard X-ray Photoelectron Spectroscopy and X-ray Diffraction

Defect engineering in oxide heterostructures by enhanced oxygen surface exchange

Sub-nanometer-scale Mapping of Crystal Orientation and Depth-Dependent Structure of Dislocation Cores in SrTiO3

Identification of a Functional Point Defect in SrTiO3

Native Point Defects at Zno Surfaces, Interfaces and Bulk Films

Probing Emergent Surface and Interfacial Properties in Complex Oxides via in situ X-ray Photoelectron Spectroscopy

Characterization Study of Deep-Level Defect Spatial Distribution, Emission Mechanisms, and Structural Identification

Massive Point Defect Redistribution Near Semiconductor Surfaces and Interfaces and Its Impact on Schottky Barrier Formation

Interplay Of Native Point Defects With Zno Schottky Barriers And Doping

Complex Oxide Interfaces: Determination of Electronic Structure of Oxide–Oxide Interfaces by Photoemission Spectroscopy (adv. Mater. 26–27/2010)

Direct Atomic Imaging of Oxide Surfaces

Experimental Measurements and Theoretical Calculations of the Atomic Structure of Materials with Subangstrom Resolution and Picometer Precision

In Situ Structural Dynamics of Atomic Defects in Tungsten Oxide