Abstract:To deal with the Hamiltonian model in InAs QDs with a single electron, we’ve taken the SO interaction as a perturbation term, calculated the SO matrix elements under Fock-Darwin eigenfunction which are used for second order corrections on the energies and wave functions, and considered the influence of new energy levels on g factor and effective mass m*. The expression of phonon-assisted electron spin relaxation rate Γ in InAs QDs is deduced, which shows different dependences on confined potential frequency ω0, temperature T, vertical height z0 and magnetic field B. Among them, temperature for the electron spin relaxation plays a dominant role, followed by lateral confinement potential frequency, magnetic field and the vertical height, in order of importance. (1) Growth of ω0, which corresponds to the decrease of the effective transverse size d in InAs QDs, suppresses the increase of the rate Γ. (2) The temperature T affects the rate Γ evidently, which will reduce the inhibition of ω0 on Γ. With increase of the temperature from 1 K to 7 K, the spin inversion relaxation rate grows explosively from 103 s－1 to 108 s－1. (3) The rate Γ decreases with the growth of the vertical height z0 and have the order of magnitude 100－103 s-1 at T=1 K, whereas the influence of the temperature increase (at T=6 K) on the rate will gradually exceed that of the height growth. (4) At different frequencies ω0 all curves of the rate Γ versus magnetic field B have a peak that almost appears at the same field, which is attributed to the contribution of the Zeeman term H ^ Z exceeding that of H ^ SO since there is a considerable g factor in InAs material.

Spin-orbit Interaction and Energy States in Nanoscale Semiconductor Quantum Rings

Electron energy state spin-splitting in nanoscale InAs/GaAs semiconductor quantum dots and rings

NUMERICAL CALCULATION OF ELECTRON ENERGY STATES FOR NANOSCOPIC InAs/GaAs QUANTUM RINGS

A computational method for energy level spin splitting simulation in InAs/GaAs semiconductor quantum dots

An Exactly Solvable Model for a Strongly Spin-Orbit-coupled Nanowire Quantum Dot

Magnetic field dependence of electron energy states in 3D nano-scopic quantum rings

Computer simulation of magnetization for vertically coupled nanoscale quantum rings

Topological States and Interplay Between Spin-Orbit and Zeeman Interactions in a Spinful Su-Schrieffer-Heeger Nanowire

Energy structure and magnetization effect of semiconductor quantum rings

Investigation of magnetic field effects on energy gap for nanoscale InAs/GaAs semiconductor ring structures

Geometric Variations and Magnetic Field Effects on Electron Energy States of InAs/GaAs Quantum Rings

Spin transport in quantum dot embedded in Aharonov–Bohm ring

Spin-orbit Coupling and Electric-Dipole Spin Resonance in a Nanowire Double Quantum Dot

Parametric Properties of the Electron Spin Relaxation Due to Spin-Orbit Interaction in Inas Quantum Dots

Energy Levels and Far-Infrared Spectroscopy for Two Electrons in A Nanoscopic Semiconductor Ring

Quantum rings with time dependent spin-orbit coupling: Rabi oscillations, spintronic Schrodinger-cat states, and conductance properties

Electron Transition Energy for Vertically Coupled InAs/GaAs Semiconductor Quantum Dots and Rings

COMPUTER SIMULATION OF MAGNETIZATION FOR 3D ELLIPSOIDAL TORUS-SHAPED InAs/GaAs QUANTUM RINGS

Tuning of the Two Electron States in Quantum Rings Through the Spin-Orbit Interaction

Spin States And Persistent Currents In Mesoscopic Rings: Spin-Orbit Interactions

Spin-orbit Interaction driven Topological Features in a Quantum Ring