Abstract:The discovery of graphene has ignited intensive interest in two-dimensional layered materials (2DLMs). These 2DLMs represent a new class of nearly ideal 2D material systems for exploring fundamental chemistry and physics at the limit of single-atom thickness, and have the potential to open up totally new technological opportunities beyond the reach of existing materials. In general, there are a wide range of 2DLMs in which the atomic layers are weakly bonded together by van der Waals interactions and can be isolated into single or few-layer nanosheets. The van der Waals interactions between neighboring atomic layers could allow much more flexible integration of distinct materials to nearly arbitrarily combine and control different properties at the atomic scale. The transition metal dichalcogenides (TMDs) (e.g., MoS2, WSe2) represent a large family of layered materials, many of which exhibit tunable band gaps that can undergo a transition from an indirect band gap in bulk crystals to a direct band gap in monolayer nanosheets. These 2D-TMDs have thus emerged as an exciting class of atomically thin semiconductors for a new generation of electronic and optoelectronic devices. Recent studies have shown exciting potential of these atomically thin semiconductors, including the demonstration of atomically thin transistors, a new design of vertical transistors, as well as new types of optoelectronic devices such as tunable photovoltaic devices and light emitting devices. In parallel, there have also been considerable efforts in developing diverse synthetic approaches for the rational growth of various forms of 2D materials with precisely controlled chemical composition, physical dimension, and heterostructure interface. Here we review the recent efforts, progress, opportunities and challenges in exploring the layered TMDs as a new class of atomically thin semiconductors.

Nanoscale electronic devices based on transition metal dichalcogenides

Recent Progress in Devices and Circuits Based on Wafer-Scale Transition Metal Dichalcogenides.

Optoelectronic Devices Based on Two-Dimensional Transition Metal Dichalcogenides

Transistors and logic circuits enabled by 2D transition metal dichalcogenides: A state-of-the-art survey

Nanoscale Transition Metal Dichalcogenides: Structures, Properties, and Applications

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

Various Structures of 2D Transition‐Metal Dichalcogenides and Their Applications

Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges

Pentagonal 2D Transition Metal Dichalcogenides: PdSe2 and Beyond

Two-dimensional Noble Transition-Metal Dichalcogenides for Nanophotonics and Optoelectronics: Status and Prospects

Progress on Two-Dimensional Transitional Metal Dichalcogenides Alloy Materials: Growth, Characterisation, and Optoelectronic Applications

Electric Field Effect in Two-Dimensional Transition Metal Dichalcogenides

Progress of Large-Scale Synthesis and Electronic Device Application of Two-Dimensional Transition Metal Dichalcogenides.

Recent Advances in Rolling 2D TMDs Nanosheets into 1D TMDs Nanotubes/Nanoscrolls

2D Metallic Transition‐Metal Dichalcogenides: Structures, Synthesis, Properties, and Applications

Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors

Phase Engineering of Two‐Dimensional Transition Metal Dichalcogenides

2d Group Ivb Transition Metal Dichalcogenides

Quantum Dot Behavior in Transition Metal Dichalcogenides Nanostructures

Physical and chemical tuning of two-dimensional transition metal dichalcogenides.