Graphene/α-tellurene van der Waals heterobilayers: Interlayer coupling and gate-tunable carrier type and Schottky barriers

Hairui Liu,Rui Gao,Jien Yang,Feng Yang,Tianxing Wang,Zhuxia Zhang,Xuguang Liu,Husheng Jia,Bingshe Xu,Heng Ma

DOI: https://doi.org/10.1016/j.apsusc.2020.146476

IF: 6.7

2020-09-01

Applied Surface Science

Abstract:<p>Two-dimensional (2D) graphene/semiconductors van der Waals (vdW) heterostructures possess ultra high carrier mobility and fine mechanical properties, which show potential applications in nanoelectronics. The regulations on interface Schottky barriers and doping concentrations are still important questions. In this work, the electronic properties of graphene/α-Tellurene (Gr/α-Te) van der Waals heterobilayers (vdW HBS) are studied via first-principle calculations. It is found that <em>p</em>-type Schottky contact with a low <em>p</em>-type Schottky barrier height (∼0.18 eV) is formed at the graphene-α-Te interface. Furthermore, <em>n</em>-type Schottky barrier transforms to <em>p</em>-type when we compress interlayer distance or apply external electric field. Moreover, the hole doping in graphene can be modulated to electron doping via compressing interlayer distance from 3.53 Å to 2.70 Å or exerting weak negative electric field. These predicted results show that Gr/α-Te vdW HBS possesses interlayer-distance and electric-field dependent Schottky barrier height, which is very useful to develop Gr/α-Te-based electronic devices.</p>

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films

What problem does this paper attempt to address?

The paper primarily explores the electronic properties of van der Waals heterobilayers (vdW HBS) composed of graphene and α-tellurene (α-Te), and investigates the effects of interlayer coupling and external electric fields on the Schottky barrier height (SBH) and carrier type.

Specifically, the paper addresses the following key issues:
1. **Construction and Stability**: Using first-principles calculations, the graphene/α-tellurene van der Waals heterobilayer structure was constructed and its stability was verified.
2. **Electronic Properties**: The electronic properties of this heterobilayer were studied, revealing that graphene and α-tellurene form a p-type Schottky contact upon contact, with a relatively low p-type Schottky barrier height (approximately 0.18 eV).
3. **Interlayer Distance Effect**: The impact of interlayer distance variation on the Schottky barrier height and carrier concentration was explored. The results show that when the interlayer distance is compressed, the n-type Schottky contact transitions to a p-type; further compression of the interlayer distance can achieve a transition from hole doping to electron doping.
4. **Electric Field Effect**: The influence of an external electric field on the electronic properties of this heterobilayer was analyzed. A negative electric field can eliminate the p-type Schottky contact and enhance the n-type Schottky contact, while a positive electric field increases the p-type Schottky barrier height and decreases the n-type Schottky barrier height.
5. **Application Prospects**: These findings are significant for the design of nanoelectronic devices based on graphene/α-tellurene van der Waals heterobilayers.

In summary, this paper aims to understand and regulate the physical properties of the graphene/α-tellurene van der Waals heterobilayer interface, providing theoretical guidance for its experimental preparation and potential applications.