Low-temperature-deposited SnO2 films for efficient planar CH3NH3PbI3 photovoltaics

Kai Zhang,Jinxia Duan,Feng Liu,Jun Zhang,Hao Wang
DOI: https://doi.org/10.1007/s10853-020-05216-y
IF: 4.5
2020-09-15
Journal of Materials Science
Abstract:Low-temperature-synthesized electron transport layers (ETLs) are in demand for the industrialization and flexibility of perovskite solar cells (PeSCs). SnO<sub>2</sub> ETLs are prepared via chemical bath deposition at low temperature. Uniform SnO<sub>2</sub> ETLs with high crystallinity and transmittance are obtained from a 0.3 M SnCl<sub>4</sub> solution through a 100 °C heat treatment. They effectively transport electrons and weaken recombination loss in SnO<sub>2</sub>-based photovoltaics. SnO<sub>2</sub>-based PeSCs exhibit a power conversion efficiency (PCE) of 16.92% with a short-circuit current density (<i>J</i><sub>SC</sub>) of 21.48 mA cm<sup>−2</sup> and a fill factor (FF) of 73.62%. Secondary bath modification is proposed to mend the surface pinholes of SnO<sub>2</sub> ETLs and boost the photoelectric properties of SnO<sub>2</sub>-based devices. The photovoltaic performance of the devices based on modified SnO<sub>2</sub> (2-SnO<sub>2</sub>) films exhibits an impressive increase compared with unembellished ones due to less pinholes and suppressed surface defects. The open circuit voltage (<i>V</i><sub>OC</sub>) and FF of 2-SnO<sub>2</sub>-based photovoltaics are enhanced to 1.10 V and 76.71%, respectively, resulting in PCE to 18.04%. Simultaneously, the dark current and hysteresis of 2-SnO<sub>2</sub>-based PeSCs are reduced because the secondary bath refines the surface nanoparticles of ETLs, passivates defects and reduces charge recombination at ETL/perovskite interfaces. Accordingly, 2-SnO<sub>2</sub>-based photovoltaics with a large area (~ 1 cm<sup>2</sup>) achieves 12.91% efficiency.
materials science, multidisciplinary
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