Epitaxial growth and magnetic properties of kagome metal FeSn/elemental ferromagnet heterostructures

Prajwal M. Laxmeesha,Tessa D. Tucker,Rajeev Kumar Rai,Shuchen Li,Myoung-Woo Yoo,Eric A. Stach,Axel Hoffmann,Steven J. May

DOI: https://doi.org/10.1063/5.0188457

IF: 2.877

2024-02-26

Journal of Applied Physics

Abstract:Binary kagome compounds TmXn (T = Mn, Fe, Co; X = Sn, Ge; m:n = 3:1, 3:2, 1:1) have garnered recent interest owing to the presence of both topological band crossings and flatbands arising from the geometry of the metal-site kagome lattice. To exploit these electronic features for potential applications in spintronics, the growth of high-quality heterostructures is required. Here, we report the synthesis of Fe/FeSn and Co/FeSn bilayers on Al2O3 substrates using molecular beam epitaxy to realize heterointerfaces between elemental ferromagnetic metals and antiferromagnetic kagome metals. Structural characterization using high-resolution x-ray diffraction, reflection high-energy electron diffraction, and electron microscopy reveals that the FeSn films are flat and epitaxial. Rutherford backscattering spectroscopy was used to confirm the stoichiometric window where the FeSn phase is stabilized, while transport and magnetometry measurements were conducted to verify metallicity and magnetic ordering in the films. Exchange bias was observed, confirming the presence of antiferromagnetic order in the FeSn layers, paving the way for future studies of magnetism in kagome heterostructures and potential integration of these materials into devices.

physics, applied

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: **How to grow high - quality FeSn thin films on an aluminum oxide (Al₂O₃) substrate and study their magnetic properties, especially the exchange bias effect in the heterostructures formed with ferromagnetic metals (such as Fe and Co)**.

Specifically, the paper focuses on the following aspects:

1. **Epitaxial growth of high - quality FeSn thin films**:
- Grow FeSn thin films on Al₂O₃ substrates by molecular beam epitaxy (MBE) technology.
- Use ferromagnetic metals (such as Fe and Co) as buffer layers to promote the continuity and crystalline quality of FeSn thin films.

2. **Structural characterization of FeSn thin films**:
- Use high - resolution X - ray diffraction (HR - XRD), reflection high - energy electron diffraction (RHEED), transmission electron microscopy (TEM), etc. to verify the epitaxial growth quality and interface properties of FeSn thin films.

3. **Magnetic properties of FeSn thin films**:
- Study the magnetic behavior of FeSn thin films, especially their antiferromagnetic properties.
- Observe the exchange bias effect, indicating the existence of antiferromagnetic order in the FeSn layer, which is of great significance for future research on magnetism and spin - orbit torque (SOT) in kagome lattice materials.

4. **Exchange bias effect in FeSn/ferromagnetic metal heterostructures**:
- Study the exchange bias phenomenon in Fe/FeSn and Co/FeSn bilayer structures and explore the interaction between ferromagnetic metals and antiferromagnetic FeSn layers.
- Through magnetization hysteresis loop measurement, it is found that there is an obvious exchange bias effect at low temperatures, which further confirms the antiferromagnetic characteristics of FeSn and its coupling with the ferromagnetic layer.

Through these studies, the paper aims to provide theoretical and technical support for the future development of spintronic devices based on kagome lattice materials.