Enhancing the high-temperature stability of OFETs by inducing D-A stacking in P(NDI2OD-T2) films

Xuetao Xiao,Wenhao Li,Qing Zhou,Zeng Wu,Xiaochan Zuo,Rong Ma,Yifei Xu,Sichun Wang,Yan Zhao
DOI: https://doi.org/10.1007/s40843-024-3147-8
2024-11-10
Science China Materials
Abstract:High-temperature stability of organic field-effect transistors (OFETs) is critical to ensure its long-term reliable operation under various environmental conditions. The molecular packing of donor-acceptor (D-A) conjugated polymers is closely related to the electrical performance stability in OFETs. Herein, we choose poly[[ N , N ′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)] as a modal system to reveal the relationship between the molecular stacking and electrical stability in high-temperature environment. The results demonstrate that the films with D-A moieties in alternate stacking have better electrical thermal stability compared to normal donor-donor (D-D) stacking. The D-A stacking configuration alternates donor and acceptor units along the out-of-plane direction, while the D-D stacking involves D-D and A-A stacking separately. The structural transition from D-D to D-A is captured at a treated temperature range of 225–250°C. Owing to the tighter packing arrangement along the π - π and lamellar directions, the electron mobility of the D-A stacked films reaches up to 0.23 cm 2 /V·s, a 50% increase as compared to the D-D stacking films. Furthermore, the D-A stacked films indicate superior electrical performance stability with mobility retaining 100% at 250°C during high-temperature cycling tests. This result highlights that the manipulation of conjugated polymer closely stacked structures can significantly enhance the thermal stability and durability of semiconductor devices.
materials science, multidisciplinary
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