Abstract:Inspired by the outstanding properties discovered in two-dimensional materials, the bottom-up generation of molecular monolayers is becoming again extremely popular as a route to develop novel functional materials and devices with tailored characteristics and minimal materials consumption. However, achieving a full-coverage over a large-area still represents a grand challenge. Here we report a molecular self-assembly protocol at the water surface in which the monolayers are strained by a novel solvent surface tension balance (SSTB) instead of a physical film balance as in the conventional Langmuir–Blodgett (LB) method. The obtained molecular monolayers can be transferred onto any arbitrary substrate including rigid inorganic oxides and metals, as well as flexible polymeric dielectrics. As a proof-of-concept, their application as ideal modification layers of a dielectric support for high-performance organic field-effect transistors (OFETs) has been demonstrated. The field-effect mobilities of both p- and n-type semiconductors displayed dramatic improvements of 1–3 orders of magnitude on SSTB-derived molecular monolayer, reaching values as high as 6.16 cm2 V–1 s–1 and 0.68 cm2 V–1 s–1 for pentacene and PTCDI-C8, respectively. This methodology for the fabrication of wafer-scale and defect-free molecular monolayers holds potential toward the emergence of a new generation of high-performance electronics based on two-dimensional materials.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c04198?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c04198</a>.AFM images and OFETS statistical mobilities (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c04198/suppl_file/am1c04198_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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