Abstract:By introducing stereochemically active lone–electron‐pair cations in the cationic groups of salt‐inclusion chalcogenides (SICs), three compounds [K2PbX][Ga7S12] (X = Cl, Br, I) are successfully obtained, which display the highest phase‐matching nonlinear optical (NLO) responses in reported SICs and suitable band gaps exceeding 2.33 eV to avoid two‐photon absorption at 1064 nm. In contrast to anionic group theory of nonlinear optical (NLO) materials that second‐harmonic generation (SHG) responses mainly originate from anionic groups, structural regulation on the cationic groups of salt‐inclusion chalcogenides (SICs) is performed to make them also contribute to the NLO effects. Herein, the stereochemically active lone–electron‐pair Pb2+ cation is first introduced to the cationic groups of NLO SICs, and the resultant [K2PbX][Ga7S12] (X = Cl, Br, I) are isolated via solid‐state method. The features of their three‐dimensional structures comprise highly oriented [Ga7S12]3− and [K2PbX]3+ frameworks derived from AgGaS2, which display the largest phase‐matching SHG intensities (2.5−2.7 × AgGaS2 @1800 nm) among all SICs. Concurrently, three compounds manifest band gap values of 2.54, 2.49, and 2.41 eV (exceeding the criterion of 2.33 eV), which can avoid two‐photon absorption under the fundamental laser of 1064 nm, along with the relatively low anisotropy of thermal expansion coefficients, leading to improved laser‐induced damage thresholds (LIDTs) values of 2.3, 3.8, and 4.0 times that of AgGaS2. In addition, the density of states and SHG coefficient calculations demonstrate that the Pb2+ cations narrow the band gaps and benefit SHG responses.

AIn3Si4P9 (A = Ca, Sr): Quaternary Phosphides with Double-Helix Structures Exhibiting High Laser-Induced Damage Thresholds

BaSi7P10 and SrSi7P10: Two Infrared Nonlinear Optical Phosphides with T2 Supertetrahedra Exhibiting Strong Second‐Harmonic Generation Effects

Noncentrosymmetric Tetrel Pnictides RuSi 4 P 4 and IrSi 3 P 3 : Nonlinear Optical Materials with Outstanding Laser Damage Threshold

Mg2In3Si2P7: A Quaternary Diamond-like Phosphide Infrared Nonlinear Optical Material Derived from ZnGeP2

[K2PbX][Ga7S12] (X = Cl, Br, I): The First Lead‐Containing Cationic Moieties with Ultrahigh Second‐Harmonic Generation and Band Gaps Exceeding the Criterion of 2.33 eV

Mg 2 In 3 Si 2 P 7 : A Quaternary Diamond-like Phosphide Infrared Nonlinear Optical Material Derived from ZnGeP 2

Nonlinear Optical Phosphide CuInSi 2 P 4 : The Inaugural Member of Diamond-Like Family I-III-IV 2 -V 4 Inspired by ZnGeP 2

Anionic Aliovalent Substitution from Structure Models of ZnS: Novel Defect Diamond-like Halopnictide Infrared Nonlinear Optical Materials with Wide Band Gaps and Large SHG Effects

The compatibly large nonlinear optical effect and high laser-induced damage threshold in a thiophosphate CsInP2S7 constructed with [P2S7]4- and [InS6]9-

LaSiP 3 and LaSi 2 P 6 : Two Excellent Rare‐Earth Pnictides with Strong SHG Responses as Mid‐ and Far‐Infrared Nonlinear Optical Crystals

Double alkaline earth metals sulfide SrMgGeS 4 with high laser-induced damage threshold and strong second-harmonic generation

Ca2Ln(BS3)(SiS4) (Ln = La, Ce, and Gd): Mixed Metal Thioborate‐Thiosilicates as Well‐Performed Infrared Nonlinear Optical Materials

A2 SnS5 : A Structural Incommensurate Modulation Exhibiting Strong Second-Harmonic Generation and a High Laser-Induced Damage Threshold (A=Ba, Sr)

Second-Harmonic Generation-Positive Na 2 Ga 2 SiS 6 with a Broad Band Gap and a High Laser Damage Threshold

A2SnS5: A Structural Incommensurate Modulation Exhibiting Strong Second‐Harmonic Generation and a High Laser‐Induced Damage Threshold (A=Ba, Sr)

Hg 3 P 2 S 8 : A New Promising Infrared Nonlinear Optical Material with a Large Second-Harmonic Generation and a High Laser-Induced Damage Threshold

A <sub>2</sub> SnS <sub>5</sub> : A Structural Incommensurate Modulation Exhibiting Strong Second‐Harmonic Generation and a High Laser‐Induced Damage Threshold (A=Ba, Sr)

Hg3P2S8: A New Promising Infrared Nonlinear Optical Material with a Large Second-Harmonic Generation and a High Laser-Induced Damage Threshold

Direct Band Gap Semiconductors with Two‐ and Three‐Dimensional Triel‐Phosphide Frameworks (Triel = Al, Ga, In)

Uncovering a Vital Band Gap Mechanism of Pnictides