Second-Harmonic Generation-Positive Na 2 Ga 2 SiS 6 with a Broad Band Gap and a High Laser Damage Threshold

Wenlong Xie,Yihan Yun,Lihan Deng,Guangmao Li,Shilie Pan
DOI: https://doi.org/10.1021/acs.inorgchem.2c00676
IF: 4.6
2022-05-05
Inorganic Chemistry
Abstract:The development of high-power solid-state lasers is in urgent need of new infrared nonlinear optical (IR NLO) materials with a wide band gap and a high laser-induced damage threshold. A new infrared nonlinear optical material Na<sub>2</sub>Ga<sub>2</sub>SiS<sub>6</sub> has been synthesized for the first time, crystallizing in the <i>Fdd</i>2 (no. 43) noncentrosymmetric space group. Its three-dimensional tunnel framework consists of two typical NLO active motifs [GaS<sub>4</sub>] and [SiS<sub>4</sub>], with Na<sup>+</sup> cations located inside the tunnels. Na<sub>2</sub>Ga<sub>2</sub>SiS<sub>6</sub> exhibits comprehensive optical properties, namely, a wide transmission range, a high laser-induced damage threshold (10 × AgGaS<sub>2</sub>), a type-I phase-matching second-harmonic generation response (0.2 × AgGaS<sub>2</sub>), and especially a wide band gap (3.93 eV), which is the largest in the A<sub>2</sub>M<sup>III</sup><sub>2</sub>M<sup>IV</sup>Q<sub>6</sub> (A = alkali metals; M<sup>III</sup> = IIIA elements; M<sup>IV</sup> = IVA elements; Q = S and Se) family. Therefore, Na<sub>2</sub>Ga<sub>2</sub>SiS<sub>6</sub> does not produce two-photon absorption under a 1064 nm laser pump and could be used in high-energy laser systems, which makes Na<sub>2</sub>Ga<sub>2</sub>SiS<sub>6</sub> a promising candidate for high-energy IR NLO applications.
chemistry, inorganic & nuclear
What problem does this paper attempt to address?