Abstract:The density functional theory (DFT) method is used to investigate the effect of low oxygen vacancy formation energy on the catalytic performance of chemical looping dry reforming of methane (CL-DRM) when metal ions are co-substituted on CeO2 (111) surface. The results show that the oxygen vacancy formation energy is extremely low with an energy of -2.05 eV when Zn and Nd are co-substituted on the CeO2 (111) surface. For the CH4 conversion process in CL-DRM, the reaction paths are found to be CH4 → CH3 → CH2 → CH → C → CO paths on the pristine as well as on the Zn and Nd co-substituted surfaces. The critical rate-limiting step for both pristine and co-substituted surfaces is the dehydrogenation of CH2 to form CH and H with activation energies of 1.62 and 1.00 eV, respectively. This indicates that the surface co-substituted with Zn and Nd promotes the CH4 conversion process more effectively than the clean surface. However, the desorption process of syngas on the co-substituted surface requires high energy, and CO is easily peroxidized to CO2 before desorption, reducing the selectivity of CO to the detriment of syngas production. For the CO2 cleavage process in CL-DRM, CO2 is difficult to generate enough energy on the co-substituted surfaces to overcome the activation energy of the reaction. The formation of oxygen vacancies is facilitated by an extremely low oxygen vacancy formation energy, which in turn enhances the adsorption of reaction intermediates in the CL-DRM process onto the oxygen carrier. Nevertheless, an excessive accumulation of oxygen vacancies can drive the oxygen carrier into a hyperactivated condition, which may inhibit the desired reaction pathways and reduce the efficiency and selectivity of the CL-DRM process. The present study is of great importance for the design concept of oxygen carriers in CL-DRM and the application potential of oxygen vacancy regulation.

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DFT insights into oxygen vacancy formation and chemical looping dry reforming of methane on metal-substituted CeO2 (111) surface

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