DFT insights into oxygen vacancy formation and chemical looping dry reforming of methane on metal-substituted CeO2 (111) surface

Tian, Dong,Wang, Hua,Li, Kongzhai
DOI: https://doi.org/10.1007/s11705-024-2513-2
IF: 4.803
2024-09-15
Frontiers of Chemical Science and Engineering
Abstract:The oxygen vacancy formation energy and chemical looping dry reforming of methane over metal-substituted CeO 2 (111) are investigated based on density functional theory calculations. The calculated results indicate that among the various metals that can substitute for the Ce atom in the CeO 2 (111) surface, Zn substitution results in the lowest oxygen vacancy formation energy. For the activation of CH 4 on CeO 2 (111) and Zn-substituted CeO 2 (111) surfaces, the calculated results illustrate that the dissociation process of CH 3(ads) is very difficult on pristine surfaces and unfavorable for CHO (ads) on substituted surfaces. Furthermore, the dissociative adsorption of CO and H 2 on the Zn-substituted CeO 2 (111) surface requires high energy, which is unfavorable for syngas production. This work demonstrates that excessive formation of oxygen vacancy can lead to excessively high adsorption energies, thus limiting the conversion efficiency of the reaction intermediates. This finding provides important guidance and application prospects for the design and optimization of oxygen carrier materials, especially in the field of chemical looping dry methane reforming to syngas.
engineering, chemical
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