Defectronics based photoelectrochemical properties of Cu2+ ion doped hematite thin film

Chang Woo Kim,Amol U. Pawar,Thomi Hawari,Na Hyeon Ahn,Don Keun Lee,Long Yang,Ramesh Poonchi Sivasankaran,Jun Tang,Zhongbiao Zhuo,Young Soo Kang
DOI: https://doi.org/10.1038/s41598-022-20045-6
IF: 4.6
2022-12-06
Scientific Reports
Abstract:The concentration of guest elements (dopants) into host materials play an important role in changing their intrinsic electrical and optical properties. The existence of hetero-element induce defect in crystal structure, affecting conductivity. In the current work, we report Cu 2+ ion into hematite in the defectronics point of view and their photoelectrochemical properties. Crystal distortion in the structure of hematite is observed as the amount of dopant increases. Among 1, 3 and 5 mol% of Cu 2+ doped hematite, the existence of 1 mol% of Cu 2+ ion into hematite crystal structure produce photocurrent value of 0.15 mA/cm 2 , IPCE value of ~ 4.7% and EIS value of ~ 2000 Ω/cm 2 as best performances. However, further increasing dopants increases the number of interstitial defects, which cause the deformation of intrinsic lattice structure.
multidisciplinary sciences
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