Abstract:The acid–base chemistry at the interface of zinc oxide (ZnO) and methylammonium lead tri-iodide (perovskite) leads to a proton transfer reaction that results in perovskite degradation. In perovskite solar cells (PSCs), this reaction produces low efficiency and reduces the long-term stability. In this work, an aluminum (Al) layer of 1–2 nm thickness is thermally evaporated on top of ZnO or Al3+-doped ZnO (ZnO:Al) thin films and then annealed at 450 °C for 30 min. Thermal annealing converts the surface aluminum film into a transparent and approximately 2 nm thick aluminum oxide (AlOx) layer. Also, a larger concentration of oxygen vacancies is obtained by the annealing of Al and attributed to the diffusion of Al into the ZnO surface, and the ZnO underlayer results in a more conductive material. As a result, the chemical stability of perovskite coatings on top of AlOx-coated ZnO films is significantly enhanced, and the flat-band level of ZnO shifts 0.09 eV upwards, which improves the energetic level alignment in PSCs. This allows us to obtain ZnO:Al/AlOx-based planar PSCs that show a maximum efficiency of 16.56% with the perovskite layer prepared in ambient conditions under a relative humidity of 40–50%. After continuous illumination of about 30 min in air, ZnO-based PSCs without AlOx layer retain only 34.5% of their original efficiency, whereas those with AlOx retain about 92.5%. It is demonstrated that thermal evaporation–oxidation is an efficient method to modify the surface properties of inorganic semiconductor thin films and improves both the performance and stability of PSCs.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaem.0c01106?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaem.0c01106</a>.XPS spectra of Zn and Al; XRD patterns, optical transmittance spectra and deconvolution of PL spectra of ZnO thin films; Bode diagrams at 0 V in dark and under illumination, at 900 mV in dark and under illumination of ZnO/AlOx and ZnO:Al/AlOx samples; CV curves of the four ZnO samples in an electrolyte of 0.1 M (CH3CH2CH2CH2)4N(PF6) in acetonitrile; EIS measurements of the four ZnO samples; flat-band, charge carrier concentration, and electronic levels of the four ZnO films; forward and reverse J–V curves and HI of freshly prepared PSCs with four different ZnO films; J–V curves of five freshly prepared PSC samples for each type of ZnO; and photovoltaic parameters of PSCs based on four different ZnO films as a function of shelf life time (storage time) in ambient conditions (<a class="ext-link" href="/doi/suppl/10.1021/acsaem.0c01106/suppl_file/ae0c01106_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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