Near‐Infrared to Visible Light Converter by Integrating Graphene Transistor into Perovskite Quantum Dot Light Emitting Diodes

Wei Zhao,Sheng Bi,Chengming Jiang,Jinhui Song

DOI: https://doi.org/10.1002/admt.202200043

IF: 6.8

2022-03-20

Advanced Materials Technologies

Abstract:Advanced Materials Technologies, EarlyView.

materials science, multidisciplinary

What problem does this paper attempt to address?

Near‐Infrared to Visible Light Converter by Integrating Graphene Transistor into Perovskite Quantum Dot Light Emitting Diodes (Adv. Mater. Technol. 8/2022)

Wei Zhao,Sheng Bi,Chengming Jiang,Jinhui Song

DOI: https://doi.org/10.1002/admt.202270048

IF: 6.8

2022-08-17

Advanced Materials Technologies

Abstract:Near‐Infrared to Visible Light Converter A near‐infrared to visible light converter (NVLC) which could emit visible light according to external NIR is fabricated in article number 2200043 by Sheng Bi ,Jinhui Song, and co‐workers. The NVLC is an integration of an inverted perovskite QLED and a hybrid PbS quantum dots/graphene transistor. Further, the micron‐scale NVLCs are integrated into a matrix device that could sense NIR image and display it into visible light image.

materials science, multidisciplinary
High-performance all-solution-processed quantum dot near-infrared-to-visible upconversion devices for harvesting photogenerated electrons

Nan Zhang,Haodong Tang,Kanming Shi,Weigao Wang,Weiqiao Deng,Bing Xu,Kai Wang,Xiao Wei Sun

DOI: https://doi.org/10.1063/1.5124735

IF: 4

2019-11-25

Applied Physics Letters

Abstract:All-solution-processed quantum dot (QD) upconversion devices were realized by constructing a colloidal PbS QD near-infrared (NIR ∼ 1 μm)-sensitive layer on the cathode side of a red CdSe quantum dot light-emitting diode (QLED). Different from conventional upconversion devices, we utilized the photogenerated electrons rather than the holes created in the NIR-sensitive layer to inject into the QLED for visible light emission. Consequently, we obtained high-performance devices with a maximum photon-to-photon conversion efficiency of 3.35% and a luminance on-off ratio of approximately 8 × 103. The results indicate that the device structure could be used to realize low-cost and portable high-performance QD-based upconversion devices via solution-processing.

physics, applied
The Interaction Between Quantum Dots and Graphene: the Applications in Graphene‐Based Solar Cells and Photodetectors

Jianghong Wu,Yanghua Lu,Sirui Feng,Zhiqian Wu,Shuyuan Lin,Zhenzhen Hao,Tianyi Yao,Xinming Li,Hongwei Zhu,Shisheng Lin

DOI: https://doi.org/10.1002/adfm.201804712

IF: 19

2018-01-01

Advanced Functional Materials

Abstract:Graphene with a series of neoteric electronic and optical properties is an intriguing building block for optoelectronic devices. Over the past decade, graphene-based solar cells (SCs) and photodetectors (PDs) which can convert light signals to electrical signals have received burgeoning exploration. However, limited light absorption hampers the performance of these devices. Quantum dots (QDs) possess a strong confinement effect, a large exciton energy, and long exciton lifetime, enhancing the interaction between incident light and graphene. Especially, as the density of states near the Dirac point of graphene is ultralow, it is easy to modify the Fermi level of graphene by inserting quantum dots at the interface between graphene and light, thereby enhancing the performance of graphene-based optoelectronic devices. The characteristics of QDs and crucial physical mechanisms of the interaction and energy transfer in QDs/graphene nanohybrids are systematically addressed. The factors influencing the efficiency of energy transfer are also analyzed quantitatively. Moreover, the experimental process of QD-enhanced technologies for SCs, photoconductors, phototransistors, and photodiode PDs is reviewed. Eventually, a conclusion is given and the remaining challenges and future development for QDs/2D materials hybrid systems is discussed. Possible steps toward large-scale commercial applications and integration into optoelectronic networks are suggested.
13‐5: Quantum‐Dot‐in‐Perovskite Near‐Infrared Light‐Emitting Diodes

Marinos Tountas,Anastasia Soultati,Abd. Rashid Bin Mohd Yusoff,Dimitris Davazoglou,Maria Vasilopoulou

DOI: https://doi.org/10.1002/sdtp.15437

2022-06-01

SID Symposium Digest of Technical Papers

Abstract:Quantum dots represent a unique class of solution‐processed semiconductors with unprecedented optoelectronic properties such as charge transport capability and light absorption/emission. Regarding the latter, the electroluminescence of these nanocrystals can spun a wide wavelength range from the visible to the near infrared through size engineering. However, they exhibit low photoluminescence quantum yield and inferior charge transport properties which hinders their application to light‐emitting diodes. On the other hand, halide perovskite semiconductors exhibit high charge carrier mobility and photoluminescence quantum efficiency approaching unity. However, their emission maxima cannot spun the whole near infrared range due to bandgap induced limitations. Here, we report unique combinations of these classes of semiconductors that allowed the fabrication of efficient near infrared electroluminescent hybrid quantum dot‐in‐perovskite device. In the first approach, core‐shell carbon polymer quantum dots were embedded into the perovskite emissive layer to induce passivation of defect sites and modify the nanomorphology hence resulting to significant efficiency enhancement. In the second approach, silica‐encapsulated silver sulphide quantum dots served as the emissive nanocrystals that were dispersed in a caesium‐containing triple cation perovskite matrix. The latter acted as a highly conductive medium that also offers effective passivation to the emissive nanocrystals. As a result, high external quantum efficiency for a long near infrared wavelength peak electroluminescence was achieved.
Near-Infrared Heterojunction Field Modulated Phototransistors with Distinct Photodetection/Photostorage Switching Feature for Artificial Visuals

Jiayue Han,Xiaoyang Du,Zhenhan Zhang,Zeyu He,Chao Han,Runzhang Xie,Fang Wang,Silu Tao,Weida Hu,Chongxin Shan,Ming Yang,Jun Gou,Zhiming Wu,Yadong Jiang,Jun Wang,Chong-Xin Shan

DOI: https://doi.org/10.1039/d2tc01363k

IF: 6.4

2022-05-24

Journal of Materials Chemistry C

Abstract:With the rising demand for recording, computing and image capture, advanced optoelectronic detection, storage and logic devices are highly pursued. Nevertheless, a multi-functional vision chip based on infrared detection and memory switching has never been demonstrated. Here, by utilizing the electronic extraction layer ZnO and face-on orientation of BHJ, we exhibit the broadband visible to near-infrared photo-response and photo-storage characters on graphene phototransistor. Functions as photodetection and photo-storage can be switched with the variation of gate voltage. The device demonstrates high photo-responsivity up to 1.88×106 A/W at 895 nm corresponding detectivity of 4.8×1012 Jones. Importantly, the rewritable and switching infrared optoelectronic memory function can be achieved with good retention over 104 s. Both retinomorphic vision and memorial preprocessing in artificial visual are simultaneously realized by photodetection/photostorage switching property. Such nearly all-solution processes in our phototransistors may open up the path for the large-scale and easy manufacturing infrared multifunctional bio-optoelectronic device.

materials science, multidisciplinary,physics, applied
Enhanced Performance of a Graphene/gaas Self-Driven Near-Infrared Photodetector with Upconversion Nanoparticles.

Jianghong Wu,Zhenwei Yang,Caiyu Qiu,Yuejiao Zhang,Zhiqian Wu,Jingliang Yang,Yanghua Lu,Jianfeng Li,Dongxiao Yang,Ran Hao,Erping Li,Geliang Yu,Shisheng Lin

DOI: https://doi.org/10.1039/c8nr00594j

IF: 6.7

2018-01-01

Nanoscale

Abstract:Near-infrared photodetectors (NIRPDs) have attracted great attention because of their wide range of applications in many fields. Herein, a novel self-driven NIRPD at the wavelength of 980 nm is reported based on the graphene/GaAs heterostructure. Extraordinarily, its sensitivity to light illumination (980 nm) is far beyond the absorption limitation of GaAs (874 nm). This means that the photocurrent originates from the separation of photo-induced carriers in graphene, which is caused by the vertically built-in electric field formed through the high quality van der Waals contact between graphene and GaAs. Moreover, after introducing NaYF4:Yb3+/Er3+ upconversion nanoparticles (UCNPs) onto the graphene/GaAs heterojunction, the responsivity increases to be as superior as 5.97 mA W-1 and the corresponding detectivity is 1.1 × 1011 cm Hz0.5 W-1 under self-driven conditions. This dramatic improvement is mainly ascribed to the radiative energy transfer from UCNPs to the graphene/GaAs heterostructure. The high-quality and self-driven UCNPs/graphene/GaAs heterostructure NIRPD holds significant potential for practical application in low-consumption and large-scale optoelectronic devices.
High-Performance Near-Infrared Photodetector by Integration of PbS Quantum Dots with 3D-Graphene

Shan Zhang,Guanglin Zhang,Li Zheng,Zhongyu Liu,Bingkun Wang,Huijuan Wu,Zhengyi He,Zhiwen Jin,Gang Wang

DOI: https://doi.org/10.1109/led.2023.3288140

IF: 4.8157

2023-01-01

IEEE Electron Device Letters

Abstract:Achieving breakthroughs in high-performance near-infrared (NIR) photodetectors (PDs) relies on selecting materials and designing device structures. This work shows the synergistic effect between three-dimensional graphene (3D-graphene) and PbS quantum dots (PbS QDs) in the PD structure design, achieved by in-situ growth of 3D-graphene on the silicon (Si) substrate, followed by PbS QDs modification on the 3D-graphene surface. The high-performance NIR PD based on PbS QDs/3D-graphene/Si heterojunction is realized. The synergistic effect of 3D-graphene with strong light absorption and the effective built-in potential modulation by PbS QDs lead to the high detectivity (1×1011 Jones) and responsivity (13.7 A/W) of the as-fabricated PD at 1550 nm.

engineering, electrical & electronic
Ultrasensitive Near-Infrared Photodetectors Based on a Graphene-MoTe2-Graphene Vertical Van Der Waals Heterostructure.

Kun Zhang,Xin Fang,Yilun Wang,Yi Wan,Qingjun Song,Wenhao Zhai,Yanping Li,Guangzhao Ran,Yu Ye,Lun Dai

DOI: https://doi.org/10.1021/acsami.6b14483

IF: 9.5

2017-01-01

ACS Applied Materials & Interfaces

Abstract:Graphene and other layered materials, such as transition metal dichalcogenides, have rapidly established themselves as exceptional building blocks for optoelectronic applications because of their unique properties and atomically thin nature. The ability to stack them into van der Waals (vdWs) heterostructures with new functionality has opened a new platform for fundamental research and device applications. Nevertheless, near-infrared (NIR) photodetectors based on layered semiconductors are rarely realized. In this work, we fabricate a graphene-MoTe2-graphene vertical vdWs heterostructure on a SiO2/p+-Si substrate by a facile and reliable site-controllable transfer method and apply it for photodetection from the visible to NIR wavelength range. Compared to the layered semiconductor photodetectors reported thus far, the graphene-MoTe2-graphene photodetector has a superior performance, including high photoresponsivity (∼110 mA W-1 at 1064 nm and 205 mA W-1 at 473 nm), high external quantum efficiency (EQE; ∼12.9% at 1064 nm and ∼53.8% at 473 nm), rapid response and recovery processes (a rise time of 24 μs and a fall time of 46 μs under 1064 nm illumination), and free from an external source-drain power supply. We have employed scanning photocurrent microscopy to investigate the photocurrent generation in this heterostructure under various back-gate voltages and found that the two Schottky barriers between the graphenes and MoTe2 play an important role in the photocurrent generation. In addition, the vdWs heterostructure has a uniform photoresponsive area. The photoresponsivity and EQE of the photodetector can be modulated by the back-gate (p+-Si) voltage. We compared the responsivities of thin and thick flakes and found that the responsivity had a strong dependence on the thickness. The heterostructure has promising applications in future novel optoelectronic devices, enabling next-generation high-responsivity, high-speed, flexible, and transparent NIR devices.
Efficient Solid-State Infrared-to-visible Photon Upconversion on Atomically Thin Monolayer Semiconductors.

Jiaru Duan,Yanping Liu,Yongqing Zhang,Zeng Chen,Xuehui Xu,Lei Ye,Zukun Wang,Yang,Delong Zhang,Haiming Zhu

DOI: https://doi.org/10.1126/sciadv.abq4935

IF: 13.6

2022-01-01

Science Advances

Abstract:Upconverting infrared light into visible light via the triplet-triplet annihilation process in solid state is important for various applications including photovoltaics, photodetection, and bioimaging. Although inorganic semiconductors with broad absorption and negligible exchange energy loss have emerged as promising alternative to molecular sensitizers, currently, they have exclusively suffered from low efficiency and contained toxic elements in near-infrared (NIR)-to-visible upconversion. Here, we report an ultrathin bilayer film for NIR-to-visible upconversion based on atomically thin two-dimensional (2D) monolayer semiconductors. The atomic flatness and strong light absorption of 2D monolayer semiconductors enable ultrafast energy transfer and robust NIR-to-visible emission with a high upconversion quantum yield (1.1 ± 0.2%) at modest incident power (260 mW cm-2). Increasing layer thickness adversely quenches the upconversion emission, highlighting the 2D advantage. Considering the whole library of 2D semiconductors, the facile large-scale production and the ultrathin solid-state architecture open a new research field for solid-state upconversion applications.
A Solution-Processed High-Performance Phototransistor Based on A Perovskite Composite with Chemically Modified Graphenes

Liu Qian,Yilin Sun,Mingmao Wu,Dan Xie,Liming Ding,Gaoquan Shi

DOI: https://doi.org/10.1002/adma.201606175

IF: 29.4

2017-01-01

Advanced Materials

Abstract:Phototransistors with a structure of a nitrogen-doped graphene quantum dots (NGQDs)-perovskite composite layer and a mildly reduced graphene oxide (mrGO) layer are fabricated through a solution-processing method. This hybrid phototransistor exhibits broad detection range (from 365 to 940 nm), high photoresponsivity (1.92 × 104 A W-1 ), and rapid response to light on-off (≈10 ms). NGQDs offer an effective and fast path for electron transfer from the perovskite to the mrGO, resulting in the improvement of photocurrent and photoswitching characteristics. The high photoresponsivity can also be ascribed to a photogating effect in the device. In addition, the phototransistor shows good stability with poly(methyl methacrylate) encapsulation, and can maintain 85% of its initial performance for 20 d in ambient air.
Perovskite quantum dots integrated with vertically aligned graphene toward ambipolar multifunctional photodetectors

Xiaoqiang Feng,Zhengyi He,Wei Zhu,Menghan Zhao,Zhiduo Liu,Siwei Yang,Shiwei Tang,Qinglei Guo,Zhiwen Jin,Da Chen,Guqiao Ding,Gang Wang

DOI: https://doi.org/10.1039/d0tc04932h

IF: 6.4

2021-01-01

Journal of Materials Chemistry C

Abstract:The photodetector exhibits outstanding performance at 1550 nm with high detectivity and photoresponsivity and a microsecond-level light response which is attributed to the synergistic effects of FAPbI 3 QDs and VAGAs.

materials science, multidisciplinary,physics, applied
Resonant Visible Light Modulation with Graphene

Renwen Yu,Valerio Pruneri,F. Javier Garcia de Abajo

DOI: https://doi.org/10.1021/ph5004829

2015-03-07

Abstract:Fast modulation and switching of light at visible and near-infrared (vis-NIR) frequencies is of utmost importance for optical signal processing and sensing technologies. No fundamental limit appears to prevent us from designing wavelength-sized devices capable of controlling the light phase and intensity at gigaherts (and even terahertz) speeds in those spectral ranges. However, this problem remains largely unsolved, despite recent advances in the use of quantum wells and phase-change materials for that purpose. Here, we explore an alternative solution based upon the remarkable electro-optical properties of graphene. In particular, we predict unity-order changes in the transmission and absorption of vis-NIR light produced upon electrical doping of graphene sheets coupled to realistically engineered optical cavities. The light intensity is enhanced at the graphene plane, and so is its absorption, which can be switched and modulated via Pauli blocking through varying the level of doping. Specifically, we explore dielectric planar cavities operating under either tunneling or Fabry-Perot resonant transmission conditions, as well as Mie modes in silicon nanospheres and lattice resonances in metal particle arrays. Our simulations reveal absolute variations in transmission exceeding 90% as well as an extinction ratio >15 dB with small insertion losses using feasible material parameters, thus supporting the application of graphene in fast electro-optics at vis-NIR frequencies.

Mesoscale and Nanoscale Physics,Optics
High‐Performance Phototransistor Based on Graphene/Organic Heterostructure for In‐Chip Visual Processing and Pulse Monitoring (Adv. Funct. Mater. 52/2022)

Chao Han,Xianchao Liu,Xingwei Han,Meiyu He,Jiayue Han,He Zhang,Xin Hou,Hongxi Zhou,He Yu,Zhiming Wu,Jun Gou,Jun Wang

DOI: https://doi.org/10.1002/adfm.202270300

IF: 19

2022-12-25

Advanced Functional Materials

Abstract:Graphene/Organic Hybrid Phototransistor In article number 2209680, Jun Wang, Xianchao Liu, and co‐workers present a graphene/organic hybrid phototransistor with a novel gate‐tunable bi‐directional photoresponse capable of simulating visual preprocessing of the human retina. Furthermore, the benefit from the outstanding photoelectric detection performance of the device, real‐time pulse signals, and heart rate monitoring applications are explored and realized. This study paves the way for the future development of multi‐functional artificial retinas.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Visible-light-stimulated synaptic InGaZnO phototransistors enabled by wavelength-tunable perovskite quantum dots

Zhilong Xin,Yang Tan,Tong Chen,Emad Iranmanesh,Lei Li,Kuan-Chang Chang,Shengdong Zhang,Chuan Liu,Hang Zhou

DOI: https://doi.org/10.1039/d1na00410g

IF: 5.598

2021-01-01

Nanoscale Advances

Abstract:The detected wavelength of perovskite quantum dots embedded in IGZO TFT can be tuned by replacing the quantum dot halogen ions. It is expected that a color-distinguishable artificial human vision system can be developed.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Interfacial Engineering of Quantum Dots–Metal–Organic Framework Composite Toward Efficient Charge Transport for a Short‐Wave Infrared Photodetector

Po‐Yu Huang,Yong‐Yun Zhang,Po‐Cheng Tsai,Ren‐Jei Chung,Yi‐Ting Tsai,Man‐kit Leung,Shih‐Yen Lin,Mu‐Huai Fang

DOI: https://doi.org/10.1002/adom.202302062

IF: 9

2023-11-10

Advanced Optical Materials

Abstract:A PbS quantum dot (QD) and conductive metal–organic framework (MOF) hybrid composite is designed with short‐wave infrared (SWIR) detection capability with the chemical bonding between MOF and PbS QDs. By integrating the PbS@MOF thin film directly on top of the graphene field effect transistor device, a highly stable and efficient charge transport SWIR photodetector can be achieved. Short‐wave infrared (SWIR) quantum dot (QD)‐converted photodetectors are one of the promising devices used in artificial intelligence and automatic navigation systems. However, compared to semi‐conductor‐type photodetectors, they suffer from poor chemical stability and weak electronic conductivity. In this study, a PbS QD and conductive metal–organic framework (MOF) hybrid composite is designed with SWIR detection capability. The Fourier‐transform infrared spectroscopy confirms the surface modification of PbS QDs with MOF. X‐ray absorption near‐edge structures spectra reveal the chemical bonding between MOF and PbS QDs. Furthermore, 2D grazing‐incidence small‐ and wide‐angle X‐ray scattering is utilized to unveil the particle stacking and the preferred orientation of the PbS@MOF thin film. By integrating the PbS@MOF thin film directly on top of the graphene field effect transistor (FET) device, the chemical stability and photoelectric properties of graphene FET are enhanced, and these are investigated using a focus ion beam with a high‐resolution transmission electron microscope. This study offers a strategy to simultaneously improve the chemical stability and the photoelectronic properties of the nanomaterials as well as contribute to the advancement of a QD‐converted SWIR photodetector.

materials science, multidisciplinary,optics
High-performance controllable ambipolar infrared phototransistors based on graphene-quantum dot hybrid

Ran Wang,Yating Zhang,Haiyang Wang,Xiaoxian Song,Lufan Jin,Haitao Dai,Sen Wu,Jianquan Yao

DOI: https://doi.org/10.48550/arXiv.1410.2413

2014-10-09

Abstract:The field effect transistors (FETs) exhibited ultrahigh responsivity (107 A/W) to infrared light with great improvement of mobility in graphene / PbS quantum dot (QD) hybrid. These reported transistors are either unipolar or depletion mode devices. In this paper, we presented and fabricated conveniently-controlled grapheme / PbS QD hybrid FETs. Through the investigation on electric and optoelectronic properties, the ambipolar FETs (normally OFF) can be switched ON by raising gate voltage (VG) up to 3.7 V and -0.8 V in the first and third quadrants. Near these thresholds (VT) each carrier species shows comparable mobility (~ 300 cm2V-1s-1). Photo-responsivity reach ~ 107 A/W near each threshold and it will linearly increases with (VG-VT). These hybrid FETs become strongly competitive candidates for devices in flexible integrated circuits with low cost, large area, low-energy consumption and high performances.

Instrumentation and Detectors,Mesoscale and Nanoscale Physics
NIR to Visible Light Upconversion Devices Comprising an NIR Charge Generation Layer and a Perovskite Emitter

Ning Li,Ying Suet Lau,Zuo Xiao,Liming Ding,Furong Zhu

DOI: https://doi.org/10.1002/adom.201801084

IF: 9

2018-10-24

Advanced Optical Materials

Abstract:Abstract Near‐infrared (NIR) to visible light upconversion is of significant importance in many applications, including thermal imaging, bioimaging, night vision, and wellness monitoring. Here, the effort to develop a high‐performing NIR to saturated green light upconversion device comprising a front solution‐processable organic bulk heterojunction NIR charge generation layer (CGL) and an upper CsPbBr 3 perovskite light‐emitting diode (LED) unit is reported. The NIR CGL, based on a blend of the NIR‐sensitive donor polymer and a nonfullerene acceptor, enables an efficient hole injection in the CsPbBr 3 LED in the presence of the NIR light and also serves as an optical outcoupling layer to enhance the visible light emission by the CsPbBr 3 LED. The CsPbBr 3 ‐based perovskite LED has a narrow emission spectrum with a peak wavelength of 520 nm, corresponding to the wavelengths near the peak response of the human eye, and has the advantage in imaging applications. Based on the upconversion process, a pixel‐less NIR to visible light imaging device is demonstrated, which can be operated at a low voltage of 3 V. The results are very encouraging, revealing a high‐performing solution‐processable upconversion device for application in NIR light imaging.

materials science, multidisciplinary,optics
Simultaneous enhancements on emissions from quantum dot and quantum well by Ag nanoparticles for color conversion

ChuHan Deng,Zhizhong Chen,Yifan Chen,Qian Sun,JingXin Nie,ZuoJian Pan,Haodong Zhang,Boyan Dong,Yian Chen,Daqi Wang,Yuchen Li,Weihua Chen,XiangNing Kang,Qi Wang,Guoyi Zhang,Bo Shen,Huijuan Wang,Fei Wang,Wei Wang,Zhongxiao Li

DOI: https://doi.org/10.1088/1361-6641/ad3275

IF: 2.048

2024-03-12

Semiconductor Science and Technology

Abstract:Quantum dots (QDs) have been paid much attention on the color conversion for light-emitting diode (LED) in micro-display recently. However, it is hard to achieve high color conversion efficiency in a thin QD layer. In this paper, we fabricated silver nanoparticles (Ag NPs) with radii ranging mostly from 25 to 35 nm on a blue LED with a peak wavelength of 450 nm, then spin-coated QDs with a peak wavelength of 565 nm. Scanning electron microscopy (SEM), cathodoluminescence (CL), photoluminescence (PL), and time-resolved PL (TRPL) measurements were performed. The PL emissions from quantum wells (QWs) of blue LED and QDs were enhanced by 10% and 32%, respectively, when the Ag NPs were included. The PL lifetimes of QWs and QDs were reduced by 10 and 6 times, respectively, compared to their initial states. Finite Difference Time Domain (FDTD) software and the perturbation method were used to simulate the PL measurements and variable separation. It was concluded that the coupling of QDs and QWs with localized surface plasmon (LSP) improves the external quantum efficiency (EQE) and enhances the spontaneous emission rate in both QWs and QDs. This paper provides a new idea for designing high-efficiency color conversion micro-LED.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
Transparent CsPbBr3 Quantum Dot Photodetector with a Vertical Transistor Structure

Cong Zhao,Yuan Liu,Liyang Chen,Jingzhou Li,H. Y. Fu,Shixi Zhao,Wen-Di Li,Guodan Wei

DOI: https://doi.org/10.1021/acsaelm.0c00877

IF: 4.494

2020-01-01

ACS Applied Electronic Materials

Abstract:Though flexible and transparent electronics has increasingly attracted attention, there are still challenges in developing vertical phototransistors to obtain photons efficiently and maintaining the gate tunable property of the transparent substrate. The active layers of the CsPbBr3 quantum dot are sandwiched between an organic blend layer of poly-TPD:PCBM (1:1) and an orthogonally binary dielectric layer of polymethyl methacrylate and polyacrylic acid. The energy-favorable interface between the organic blend film and CsPbBr3 quantum dot is used for effective exciton dissociation and charge separation, whereas the orthogonally binary dielectric layer on the transparent indium tin oxide substrate is incorporated for effective gate tunable property. The obtained CsPbBr3 quantum dot-based photodetector has a transparency of up to 93% in the visible light range with a responsivity of 80 mA/W and a detectivity of 2.2 X 10(11) Jones. This work offers pioneering opportunities in emerging wearable optoelectronics for light detection with sensitivity and transparency.
Highly efficient rubrene-graphene charge transfer interfaces as phototransistors in the visible regime

Gareth F. Jones,Rui M. Pinto,Adolfo De Sanctis,V. Karthik Nagareddy,C. David Wright,Helena Alves,Monica F. Craciun,Saverio Russo

DOI: https://doi.org/10.1002/adma.201702993

2017-10-03

Abstract:Atomically thin materials such as graphene are uniquely responsive to charge transfer from adjacent materials, making them ideal charge transport layers in phototransistor devices. Effective implementation of organic semiconductors as a photoactive layer would open up a multitude of applications in biomimetic circuitry and ultra-broadband imaging but polycrystalline and amorphous thin films have shown inferior performance compared to inorganic semiconductors. Here, we utilize the long-range order in rubrene single crystals to engineer organic semiconductor-graphene phototransistors surpassing previously reported photo-gating efficiencies by one order of magnitude. Phototransistors based upon these interfaces are spectrally selective to visible wavelengths and, through photoconductive gain mechanisms, achieve responsivity as large as 10^7 A/W and a detectivity of 1.5 10^9 Jones at room temperature. These findings point towards implementing low-cost, flexible materials for amplified imaging at ultra-low light levels.

Applied Physics,Mesoscale and Nanoscale Physics,Instrumentation and Detectors

Near‐Infrared to Visible Light Converter by Integrating Graphene Transistor into Perovskite Quantum Dot Light Emitting Diodes

Near‐Infrared to Visible Light Converter by Integrating Graphene Transistor into Perovskite Quantum Dot Light Emitting Diodes (Adv. Mater. Technol. 8/2022)

High-performance all-solution-processed quantum dot near-infrared-to-visible upconversion devices for harvesting photogenerated electrons

The Interaction Between Quantum Dots and Graphene: the Applications in Graphene‐Based Solar Cells and Photodetectors

13‐5: Quantum‐Dot‐in‐Perovskite Near‐Infrared Light‐Emitting Diodes

Near-Infrared Heterojunction Field Modulated Phototransistors with Distinct Photodetection/Photostorage Switching Feature for Artificial Visuals

Enhanced Performance of a Graphene/gaas Self-Driven Near-Infrared Photodetector with Upconversion Nanoparticles.

High-Performance Near-Infrared Photodetector by Integration of PbS Quantum Dots with 3D-Graphene

Ultrasensitive Near-Infrared Photodetectors Based on a Graphene-MoTe2-Graphene Vertical Van Der Waals Heterostructure.

Efficient Solid-State Infrared-to-visible Photon Upconversion on Atomically Thin Monolayer Semiconductors.

A Solution-Processed High-Performance Phototransistor Based on A Perovskite Composite with Chemically Modified Graphenes

Perovskite quantum dots integrated with vertically aligned graphene toward ambipolar multifunctional photodetectors

Resonant Visible Light Modulation with Graphene

High‐Performance Phototransistor Based on Graphene/Organic Heterostructure for In‐Chip Visual Processing and Pulse Monitoring (Adv. Funct. Mater. 52/2022)

Visible-light-stimulated synaptic InGaZnO phototransistors enabled by wavelength-tunable perovskite quantum dots

Interfacial Engineering of Quantum Dots–Metal–Organic Framework Composite Toward Efficient Charge Transport for a Short‐Wave Infrared Photodetector

High-performance controllable ambipolar infrared phototransistors based on graphene-quantum dot hybrid

NIR to Visible Light Upconversion Devices Comprising an NIR Charge Generation Layer and a Perovskite Emitter

Simultaneous enhancements on emissions from quantum dot and quantum well by Ag nanoparticles for color conversion

Transparent CsPbBr3 Quantum Dot Photodetector with a Vertical Transistor Structure

Highly efficient rubrene-graphene charge transfer interfaces as phototransistors in the visible regime