Enhanced Nonlinear Response by Manipulating the Dirac Point at the (111) Interface

G. Tuvia,A. Burshtein,I. Silber,A. Aharony,O. Entin-Wohlman,M. Goldstein,Y. Dagan,and Y. Dagan
DOI: https://doi.org/10.1103/physrevlett.132.146301
IF: 8.6
2024-04-04
Physical Review Letters
Abstract:Tunable spin-orbit interaction (SOI) is an important feature for future spin-based devices. In the presence of a magnetic field, SOI induces an asymmetry in the energy bands, which can produce nonlinear transport effects ( V∼I2 ). Here, we focus on such effects to study the role of SOI in the (111) LaTiO3/SrTiO3 interface. This system is a convenient platform for understanding the role of SOI since it exhibits a single-band Hall response through the entire gate-voltage range studied. We report a pronounced rise in the nonlinear longitudinal resistance at a critical in-plane field Hcr . This rise disappears when a small out-of-plane field component is present. We explain these results by considering the location of the Dirac point formed at the crossing of the spin-split energy bands. An in-plane magnetic field pushes this point outside of the Fermi contour, and consequently changes the symmetry of the Fermi contours and intensifies the nonlinear transport. An out-of-plane magnetic field opens a gap at the Dirac point, thereby significantly diminishing the nonlinear effects. We propose that magnetoresistance effects previously reported in interfaces with SOI could be comprehended within our suggested scenario. https://doi.org/10.1103/PhysRevLett.132.146301 © 2024 American Physical Society
physics, multidisciplinary
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