Abstract:The efficient nondestructive assessment of quality and homogeneity for two-dimensional (2D) MoS2 is critically important to advance their practical applications. Here, we presented a rapid and large-area assessment method for visually evaluating the quality and uniformity of chemical vapor deposition (CVD)-grown MoS2 monolayers simply with conventional optical microscopes. This was achieved through one-pot adsorbing abundant sulfur particles selectively onto as-grown poorer-quality MoS2 monolayers in a CVD system without any additional treatment. We further revealed that this favorable adsorption of sulfur particles on MoS2 originated from their intrinsic higher-density sulfur vacancies. Based on unadsorbed MoS2 monolayers, superior performance field effect transistors with a mobility of ∼49 cm2 V–1 s–1 were constructed. Importantly, the assessment approach was noninvasive due to the all-vapor-phase and moderate adsorption–desorption process. Our work offers a new route for the performance and yield optimization of devices by quality assessment of 2D semiconductors prior to device fabrication.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.0c03884?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.0c03884</a>.Experimental setup, Raman and PL spectra of the obtained MoS2 samples, the adsorption of sulfur particles on the bare substrate without MoS2 growth, more details on thermal evaporation–adsorption, more STEM characterizations on the obtained MoS2 samples, micro-XPS characterizations on the obtained MoS2 samples, theoretical calculation about the sulfur adsorption energies on the MoS2 monolayers, more electrical performances for the obtained MoS2, and more characterizations on the removal of sulfur particles (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c03884/suppl_file/nl0c03884_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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