Heat-assisted neuromorphic computing

Ranjan K. Patel,Shriram Ramanathan

DOI: https://doi.org/10.1038/s41563-024-01928-7

IF: 41.2

2024-06-19

Nature Materials

Abstract:Heat facilitates electrical resistance switching in Mott insulators and can synergistically enhance neuromorphic computing.

materials science, multidisciplinary,physics, applied,chemistry, physical, condensed matter

What problem does this paper attempt to address?

Mott neurons with dual thermal dynamics for spatiotemporal computing

Gwangmin Kim,Jae Hyun In,Younghyun Lee,Hakseung Rhee,Woojoon Park,Hanchan Song,Juseong Park,Jae Bum Jeon,Timothy D. Brown,A. Alec Talin,Suhas Kumar,Kyung Min Kim

DOI: https://doi.org/10.1038/s41563-024-01913-0

IF: 41.2

2024-06-19

Nature Materials

Abstract:Heat dissipation is a natural consequence of operating any electronic system. In nearly all computing systems, such heat is usually minimized by design and cooling. Here, we show that the temporal dynamics of internally produced heat in electronic devices can be engineered to both encode information within a single device and process information across multiple devices. In our demonstration, electronic NbO x Mott neurons, integrated on a flexible organic substrate, exhibit 18 biomimetic neuronal behaviours and frequency-based nociception within a single component by exploiting both the thermal dynamics of the Mott transition and the dynamical thermal interactions with the organic substrate. Further, multiple interconnected Mott neurons spatiotemporally communicate purely via heat, which we use for graph optimization by consuming over 10 6 times less energy when compared with the best digital processors. Thus, exploiting natural thermal processes in computing can lead to functionally dense, energy-efficient and radically novel mixed-physics computing primitives.

materials science, multidisciplinary,physics, applied,chemistry, physical, condensed matter
Thermal memristor and neuromorphic networks for manipulating heat flow

Philippe Ben-Abdallah

DOI: https://doi.org/10.1063/1.4985055

IF: 1.697

2017-06-01

AIP Advances

Abstract:A memristor is one of four fundamental two-terminal solid elements in electronics. In addition with the resistor, the capacitor and the inductor, this passive element relates the electric charges to current in solid state elements. Here we report the existence of a thermal analog for this element made with metal-insulator transition materials. We demonstrate that these memristive systems can be used to create thermal neurons opening so the way to neuromorphic networks for smart thermal management and information treatment.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Energy-Efficient, Stable and Temperature-Tolerant Neuromorphic Device Based on Single Crystals of Halide Perovskites

Lue Zhou,Shuyao Han,Heng Liu,Ziyu He,Junli Huang,Yuncheng Mu,Yuhao Xie,Xiaodong Pi,Xinhui Lu,Shu Zhou,Yanglong Hou

DOI: https://doi.org/10.1016/j.xcrp.2024.102078

IF: 8.9

2024-01-01

Cell Reports Physical Science

Abstract:As artificial intelligence emerges for substituting human labor, novel forms of computing are currently in demand. Synaptic memristors functioning as the basic element of the brain serve as a promising strategy to fundamentally approach brain-inspired computing. However, several great challenges must be addressed before practical memristor-based neuromorphic computing can be realized, including substandard power consumption, operational stability, and temperature tolerance. Here, we report on the capacity to confront all these challenges by exploiting the ability of single-crystalline halide perovskites to engage in artificial synapses with excellent synaptic weight modulation. Temperature-dependent electrical-cycling test and modeling unveil a unique synaptic weight updating mechanism where an ionic inductive effect drives resistive switching from a high-resistance state to a low-resistance state by symmetrically lowered Schottky barrier heights. A proof-of-concept demonstration for neuromorphic computing is performed by using the robust device comprising spiking neural networks, which are proven effective for recognizing handwritten digits, with an accuracy of over 90% in a wide temperature range.
High-temperature-resistant Synaptic Transistors for Neuromorphic Computing

Xiao Liu,Liang Chu,Wensheng Yan,Xiaodong Pi

DOI: https://doi.org/10.1016/j.xcrp.2024.102079

IF: 8.9

2024-01-01

Cell Reports Physical Science

Abstract:Neuromorphic computing systems based on high-temperature-resistant synaptic devices have emerged as energy-efficient and intelligent strategies for harsh-environment applications, such as fire alarms, nuclear combustion monitoring, and planetary exploration. The synaptic devices can be constructed by two-terminal memristors or three-terminal field-effect transistors. Though the latter exhibits a relatively complex structure, they are advantageous for linear conductance switching, multi-terminal modulation, and emulation of versatile synaptic functionalities. Herein, we will summarize the recent progress of high-temperature-resistant synaptic transistors (HTRSTs). Firstly, an in-depth discussion is conducted regarding their working mechanisms, device structures, and temperature-dependent synaptic characteristics. Then, an overview of the active materials commonly employed in HTRSTs is provided. Several application scenarios of HTRSTs for neuromorphic computing are presented. Finally, a few perspectives and directions for the future development of HTRSTs are outlined.
Thermal Management in Neuromorphic Materials, Devices, and Networks

Felipe Torres,Ali C. Basaran,Ivan K. Schuller

DOI: https://doi.org/10.1002/adma.202205098

IF: 29.4

2022-09-08

Advanced Materials

Abstract:Machine learning has experienced unprecedented growth in recent years, often referred to as an "artificial intelligence revolution." Biological systems inspire the fundamental approach for this new computing paradigm: using neural networks to classify large amounts of data into sorting categories. Current machine learning schemes implement simulated neurons and synapses on standard computers based on a von Neumann architecture. This approach is inefficient in energy consumption, and thermal management, motivating searching for hardware‐based systems that imitate the brain. This tutorial describes the present state of thermal management of neuromorphic computing technology and describes the challenges and opportunities of the energy‐efficient implementation of neuromorphic devices. The introduction is presented in chapter 1, where we briefly describe the main features of brain‐inspired computing and quantum materials for implementing neuromorphic devices. In chapter 2 we discuss the brain criticality and resistive switching‐based neuromorphic devices. Chapter 3 presents the energy and electrical considerations for spiking‐based computation. We address the fundamental features of the brain's thermal regulation in chapter 4. Hereafter, we analyse the physical mechanisms for thermal management (chapter 5) and thermoelectric control of materials and neuromorphic devices (chapter 6). At the end we describe challenges and new avenues for implementing energy‐efficient computing. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
A review of Mott insulator in memristors: The materials, characteristics, applications for future computing systems and neuromorphic computing

Yunfeng Ran,Yifei Pei,Zhenyu Zhou,Hong Wang,Yong Sun,Zhongrong Wang,Mengmeng Hao,Jianhui Zhao,Jingsheng Chen,Xiaobing Yan

DOI: https://doi.org/10.1007/s12274-022-4773-9

IF: 9.9

2022-08-23

Nano Research

Abstract:Mott insulator material, as a kind of strongly correlated electronic system with the characteristic of a drastic change in electrical conductivity, shows excellent application prospects in neuromorphological calculations and has attracted significant attention in the scientific community. Especially, computing systems based on Mott insulators can overcome the bottleneck of separated data storage and calculation in traditional artificial intelligence systems based on the von Neumann architecture, with the potential to save energy, increase operation speed, improve integration, scalability, and three-dimensionally stacked, and more suitable to neuromorphic computing than a complementary metal-oxide-semiconductor. In this review, we have reviewed Mott insulator materials, methods for driving Mott insulator transformation (pressure-, voltage-, and temperature-driven approaches), and recent relevant applications in neuromorphic calculations. The results in this review provide a path for further study of the applications in neuromorphic calculations based on Mott insulator materials and the related devices.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Non-Thermal Resistive Switching in Mott Insulators

Yoav Kalcheim,Alberto Camjayi,Javier del Valle,Pavel Salev,Marcelo Rozenberg,Ivan K. Schuller

DOI: https://doi.org/10.1038/s41467-020-16752-1

2019-08-23

Abstract:Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. We resolve this issue by studying nanowires of two archetypical Mott insulators - VO2 and V2O3. Our findings show a crossover between two qualitatively different regimes. In one, the IMT is driven by Joule heating to the transition temperature, while in the other, field-assisted carrier generation gives rise to a doping driven IMT which is purely non-thermal. By identifying the key material properties governing these phenomena, we propose a universal mechanism for resistive switching in Mott insulators. This understanding enabled us to control the switching mechanism using focused ion-beam irradiation, thereby facilitating an electrically driven non-thermal IMT. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state of the art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators.

Strongly Correlated Electrons,Materials Science
Biorealistic Neuronal Temperature-Sensitive Dynamics within Threshold Switching Memristors: Toward Neuromorphic Thermosensation

Akhil Bonagiri,Sujan Kumar Das,Camilo Verbel Marquez,Armando Rúa,Etienne Puyoo,Shimul Kanti Nath,David Albertini,Nicolas Baboux,Mutsunori Uenuma,Robert Glen Elliman,Sanjoy Kumar Nandi

DOI: https://doi.org/10.1021/acsami.4c03803

IF: 9.5

2024-06-06

ACS Applied Materials & Interfaces

Abstract:Neuromorphic nanoelectronic devices that can emulate the temperature-sensitive dynamics of biological neurons are of great interest for bioinspired robotics and advanced applications such as in silico neuroscience. In this work, we demonstrate the biomimetic thermosensitive properties of two-terminal V(3)O(5) memristive devices and showcase their similarity to the firing characteristics of thermosensitive biological neurons. The temperature-dependent electrical characteristics of V(3)O(5)-based...

materials science, multidisciplinary,nanoscience & nanotechnology
Energy-adaptive resistive switching with controllable thresholds in insulator–metal transition

Tiantian Huang,Rui Zhang,Lepeng Zhang,Peiran Xu,Yunkai Shao,Wanli Yang,Zhimin Chen,Xin Chen,Ning Dai

DOI: https://doi.org/10.1039/d2ra06866d

IF: 4.036

2022-12-13

RSC Advances

Abstract:Resistive switching has provided a significant avenue for electronic neural networks and neuromorphic systems. Inspired by the active regulation of neurotransmitter secretion, realizing electronic elements with self-adaptive characteristics is vital for matching Joule heating or sophisticated thermal environments in energy-efficient integrated circuits. Here we present energy-adaptive resistive switching via a controllable insulator–metal transition. Memory-related switching is designed and implemented by manipulating conductance transitions in vanadium dioxide. The switching power decreases dynamically by about 58% during the heating process. Furthermore, the thresholds can be controlled by adjusting the insulator–metal transition processes in such nanowire-based resistive switching, and then preformed in a wide range of operating temperatures. We believe that such power-adaptive switching is of benefit for intelligent memory devices and neuromorphic electronics with low energy consumption.

chemistry, multidisciplinary
Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Keyuan Ding,Jiangjing Wang,Yuxing Zhou,He Tian,Lu,Riccardo Mazzarello,Chunlin Jia,Wei Zhang,Feng Rao,Evan Ma

DOI: https://doi.org/10.1126/science.aay0291

IF: 56.9

2019-01-01

Science

Abstract:Artificial intelligence and other data-intensive applications have escalated the demand for data storage and processing. New computing devices, such as phase-change random access memory (PCRAM)-based neuro-inspired devices, are promising options for breaking the von Neumann barrier by unifying storage with computing in memory cells. However, current PCRAM devices have considerable noise and drift in electrical resistance that erodes the precision and consistency of these devices. We designed a phase-change heterostructure (PCH) that consists of alternately stacked phase-change and confinement nanolayers to suppress the noise and drift, allowing reliable iterative RESET and cumulative SET operations for high-performance neuro-inspired computing. Our PCH architecture is amenable to industrial production as an intrinsic materials solution, without complex manufacturing procedure or much increased fabrication cost.
The Heat Conduction Renaissance

Aditya Sood,Eric Pop,Mehdi Asheghi,Kenneth E. Goodson

DOI: https://doi.org/10.1109/ITHERM.2018.8419484

2018-07-30

Abstract:Some of the most exciting recent advancements in heat conduction physics have been motivated, enabled, or achieved by the thermal management community that ITherm serves so effectively. In this paper we highlight the resulting renaissance in basic heat conduction research, which is linked to cooling challenges from power transistors to portables. Examples include phonon transport and scattering in nanotransistors, engineered high-conductivity composites, modulated conductivity through phase transitions, as well as the surprising transport properties of low-dimensional (1D and 2D) nanomaterials. This work benefits strongly from decades of collaboration and leadership from the semiconductor industry.

Applied Physics
Reconfigurable cascaded thermal neuristors for neuromorphic computing

Erbin Qiu,Yuan-Hang Zhang,Massimiliano Di Ventra,Ivan K. Schuller

2023-10-06

Abstract:While the complementary metal-oxide semiconductor (CMOS) technology is the mainstream for the hardware implementation of neural networks, we explore an alternative route based on a new class of spiking oscillators we call thermal neuristors, which operate and interact solely via thermal processes. Utilizing the insulator-to-metal transition in vanadium dioxide, we demonstrate a wide variety of reconfigurable electrical dynamics mirroring biological neurons. Notably, inhibitory functionality is achieved just in a single oxide device, and cascaded information flow is realized exclusively through thermal interactions. To elucidate the underlying mechanisms of the neuristors, a detailed theoretical model is developed, which accurately reflects the experimental results. This study establishes the foundation for scalable and energy-efficient thermal neural networks, fostering progress in brain-inspired computing.

Emerging Technologies,Applied Physics
Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor

Haizhong Zhang,Xin Ju,Haitao Jiang,Dan Yang,Rongshan Wei,Wei Hu,Xiaoqiang Lu,Minmin Zhu

DOI: https://doi.org/10.1007/s40843-024-2829-9

2024-05-26

Science China Materials

Abstract:The next-generation computing system is required to perform 10 18 floating point operations per second to address the exponential growth of data from sensory terminals, driven by advancements in artificial intelligence and the Internet of Things. Even if a supercomputer possesses the capability to execute these operations, managing heat dissipation becomes a significant challenge when the electronic synapse array reaches a comparable scale with the human neuron network. One potential solution to address thermal hotspots in electronic devices is the use of vertically-aligned hexagonal boron nitride (h-BN) known for its high thermal conductivity. In this study, we have developed textured h-BN films using the high power impulse magnetron sputtering technique. The thermal conductivity of the oriented h-BN film is approximately 354% higher than that of the randomly oriented counterpart. By fabricating electronic synapses based on the textured h-BN thin film, we demonstrate various bio-synaptic plasticity in this device. Our results indicate that orientation engineering can effectively enable h-BN to function as a suitable self-heat dissipation layer, thereby paving the way for future wearable memory devices, solar cells, and neuromorphic devices.

materials science, multidisciplinary
Non-thermal resistive switching in Mott insulator nanowires

Yoav Kalcheim,Alberto Camjayi,Javier del Valle,Pavel Salev,Marcelo Rozenberg,Ivan K. Schuller

DOI: https://doi.org/10.1038/s41467-020-16752-1

IF: 16.6

2020-06-12

Nature Communications

Abstract:Abstract Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. Using nanowires of two archetypal Mott insulators—VO 2 and V 2 O 3 we unequivocally show that a purely non-thermal electrical IMT can occur in both materials. The mechanism behind this effect is identified as field-assisted carrier generation leading to a doping driven IMT. This effect can be controlled by similar means in both VO 2 and V 2 O 3 , suggesting that the proposed mechanism is generally applicable to Mott insulators. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state-of-the-art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators.

multidisciplinary sciences
Cortical Processing with Thermodynamic-RAM

M. Alexander Nugent,Timothy W. Molter

DOI: https://doi.org/10.48550/arXiv.1408.3215

2014-08-14

Abstract:AHaH computing forms a theoretical framework from which a biologically-inspired type of computing architecture can be built where, unlike von Neumann systems, memory and processor are physically combined. In this paper we report on an incremental step beyond the theoretical framework of AHaH computing toward the development of a memristor-based physical neural processing unit (NPU), which we call Thermodynamic-RAM (kT-RAM). While the power consumption and speed dominance of such an NPU over von Neumann architectures for machine learning applications is well appreciated, Thermodynamic-RAM offers several advantages over other hardware approaches to adaptation and learning. Benefits include general-purpose use, a simple yet flexible instruction set and easy integration into existing digital platforms. We present a high level design of kT-RAM and a formal definition of its instruction set. We report the completion of a kT-RAM emulator and the successful port of all previous machine learning benchmark applications including unsupervised clustering, supervised and unsupervised classification, complex signal prediction, unsupervised robotic actuation and combinatorial optimization. Lastly, we extend a previous MNIST hand written digits benchmark application, to show that an extra step of reading the synaptic states of AHaH nodes during the train phase (healing) alone results in plasticity that improves the classifier's performance, bumping our best F1 score up to 99.5%.

Neural and Evolutionary Computing,Emerging Technologies
Unlocking the resistive switching in Acacia Senegal-based electrolyte for neuromorphic computation

Aziz Lokhandwala,Parth Thakkar,Jeny Gosai,Suvik Oza,Ankur Solanki

DOI: https://doi.org/10.1039/d3tc03451h

IF: 6.4

2024-01-18

Journal of Materials Chemistry C

Abstract:The conduction of ionic species through solid-state memristive devices exhibited markedly lower mobility than that of ions (Na + , K + , and Ca 2+ ) in the human brain, presenting a major bottleneck of implementation of these devices for neuromorphic applications. In an attempt to resolve this issue and compete with demands in soft electronic technologies, ionic electrolytes are promising candidates as active materials. Herein, we report a new approach for implementing the rheological properties of Acacia Senegal with sodium chloride (AS@NaCl) electrolyte to obtain the resistive switching property. The device exhibits resistive switching, with the SET process with energy condumption of 0.16 mJ, and ∼5.46 μJ with 1.2 cm and 0.2 mm channel diameter, respectively. Impedance spectroscopy was performed to investigate the role of the rheological properties of the medium and the medium–electrode interface for resistive switching. Furthermore, a theoretical model was adopted for quantitative analysis. To evaluate the potential of the device for neuromorphic tasks and prove its resemblance with the synapse governing neuronal dynamics, all four spike time dependent plasticity (STDP) (symmetric (Hebbian/Anti-Hebbian) and asymmetric (Hebbian/Anti-Hebbian)) pattern in addition to other preliminary synaptic characteristics are presented. The findings reveal the potential of the AS@NaCl electrolyte for low-cost and easy processable technology for memristive applications.

materials science, multidisciplinary,physics, applied
Neuromorphic Computing: Devices, Hardware, and System Application Facilitated by Two-Dimensional Materials

Jihong Bian,Zhenyuan Cao,Peng Zhou

DOI: https://doi.org/10.1063/5.0067352

IF: 15

2021-01-01

Applied Physics Reviews

Abstract:Conventional computing based on von Neumann architecture cannot satisfy the demands of artificial intelligence (AI) applications anymore. Neuromorphic computing, emulating structures and principles based on the human brain, provides an alternative and promising approach for efficient and low consumption information processing. Herein, recent progress in neuromorphic computing enabled by emerging two-dimensional (2D) materials is introduced from devices design and hardware implementation to system integration. Especially, the advances of hopeful artificial synapses and neurons utilizing the resistive-switching-based devices, 2D ferroelectric-based memories and transistors, ultrafast flash, and promising transistors with attractive structures are highlighted. The device features, performance merits, bottlenecks, and possible improvement strategies, along with large-scale brain-inspired network fulfillment, are presented. Challenges and prospects of system application for neuromorphic computing are briefly discussed, shedding light on its great potential for AI.
Proton gated oxide neuromorphic transistors with temperature-sensitive thermochromic function

Xin Huang,Si Yuan Zhou,Xin Li Chen,You Jie Huang,Wei Sheng Wang,Yan Li,Hui Xiao,Li Qiang Zhu

DOI: https://doi.org/10.1063/5.0220360

IF: 4

2024-07-29

Applied Physics Letters

Abstract:Temperature is always one of the most important factors that critically affects the electrical performance of devices. In the present work, the thermochromic function has been realized on oxide neuromorphic transistors gated by a chitosan based electrolyte mixed with temperature-sensitive thermochromic powder. Except for extremely strong proton gating effects, the device exhibits temperature-sensitive thermochromic activities with good electrical performance. It also demonstrates typical synaptic functions at different temperatures, mimicking heat pain sensation activities. Additionally, a high recognition accuracy of ∼93.80% for MNIST handwritten digits is obtained at different temperatures, indicating good stabilities for neuromorphic computing. The present work opens up interesting idea for bionic cognitive electronic skin and bionic thermochromic cognitive platforms.

physics, applied
Thermal-Aware Layout Optimization and Mapping Methods for Resistive Neuromorphic Engines

Chengrui Zhang,Yu Ma,Pingqiang Zhou

DOI: https://doi.org/10.1109/asp-dac52403.2022.9712596

2022-01-17

Abstract:Resistive neuromorphic engines can accelerate spiking neural network tasks with memristor crossbars. However, the stored weight is influenced by the temperature, which leads to accuracy and endurance degradation. The higher the temperature is, the larger the influence is. In this work, we propose a cross-array mapping method and a layout optimization method to reduce the thermal effect with the consideration of input distribution, weight value and layout of memristor crossbars. Experimental results show that our method reduces the peak temperature up to 10.4K and improves the endurance up to 1.72×.
Scanning Thermal Microscopy method for self-heating in non-linear devices and application to current filaments in resistive RAM

Nele Harnack,Sophie Rodehutskors,Bernd Gotsmann

2024-09-27

Abstract:Resistive RAM (RRAM) devices are candidates for neuromorphic computing devices in which the functionality lies in the formation and reversible rupture and gap-closing of conducting filaments in insulating layers. To explore the thermal properties of these nanoscale filaments, Scanning Thermal Microscopy (SThM) can be employed. However, since RRAM devices, as well as many other neuromorphic device types, have a non-linear resistance-voltage relationship, the high resolution and quantitative method of AC-modulated SThM cannot readily be used. To this end, an extended non-equilibrium scheme for temperature measurement using SThM is proposed, with which the self-heating of non-linear devices is studied without the need for calibrating the tip-sample contact for a specific material combination, geometry or roughness. Both a DC and an AC voltage are applied to the device, triggering a periodic temperature rise, which enables the simultaneous calculation of the tip-sample thermal resistance and the device temperature rise. The method is applied to $\mathrm{HfO_2}$-based RRAM devices to extract properties like the number of current filaments, thermal confinement and thermal cross-talk. This approach could be applied to other thermometry techniques, including infrafred imaging and Raman thermometry.

Mesoscale and Nanoscale Physics,Materials Science

Heat-assisted neuromorphic computing

Mott neurons with dual thermal dynamics for spatiotemporal computing

Thermal memristor and neuromorphic networks for manipulating heat flow

Energy-Efficient, Stable and Temperature-Tolerant Neuromorphic Device Based on Single Crystals of Halide Perovskites

High-temperature-resistant Synaptic Transistors for Neuromorphic Computing

Thermal Management in Neuromorphic Materials, Devices, and Networks

A review of Mott insulator in memristors: The materials, characteristics, applications for future computing systems and neuromorphic computing

Non-Thermal Resistive Switching in Mott Insulators

Biorealistic Neuronal Temperature-Sensitive Dynamics within Threshold Switching Memristors: Toward Neuromorphic Thermosensation

Energy-adaptive resistive switching with controllable thresholds in insulator–metal transition

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

The Heat Conduction Renaissance

Reconfigurable cascaded thermal neuristors for neuromorphic computing

Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor

Non-thermal resistive switching in Mott insulator nanowires

Cortical Processing with Thermodynamic-RAM

Unlocking the resistive switching in Acacia Senegal-based electrolyte for neuromorphic computation

Neuromorphic Computing: Devices, Hardware, and System Application Facilitated by Two-Dimensional Materials

Proton gated oxide neuromorphic transistors with temperature-sensitive thermochromic function

Thermal-Aware Layout Optimization and Mapping Methods for Resistive Neuromorphic Engines

Scanning Thermal Microscopy method for self-heating in non-linear devices and application to current filaments in resistive RAM