Abstract:The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic applications of (Ga,Mn)As, or other dilute magnetic semiconductors, remains their below room-temperature ferromagnetic transition temperature. Enhancing ferromagnetism in semiconductors requires understanding the mechanisms for interaction between magnetic dopants, such as Mn, and identifying the circumstances in which ferromagnetic interactions are maximized [5]. Here we report the use of a novel atom-by-atom substitution technique with the scanning tunnelling microscope (STM) to perform the first controlled atomic scale study of the interactions between isolated Mn acceptors mediated by the electronic states of GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn-Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-xMnxAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. Our experimental methods also provide a realistic approach to create precise arrangements of single spins as coupled quantum bits for memory or information processing purposes.

Band modification in (Ga, Mn)As evidenced by new measurement scheme --- magnetic photoresistance circular dichroism

Origin of the anomalous magnetic circular dichroism spectral shape in ferromagnetic (Ga,Mn)As: Impurity bands inside the band gap

Ab Initio Study on the Electronic Structure and Magnetism of MnAs, MnSb, and MnBi

Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide

Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructure

Magnetic dichroism study on Mn$_{1.8}$Co$_{1.2}$Ga thin film using a combination of X-ray absorption and photoemission spectroscopy

Magnetic circular dichroism in GaMnAs: (no) evidence for an impurity band

Electronic structure of (Ga,Mn)As as seen by synchrotron radiation

Development of magnetism in Fe-doped magnetic semiconductors: Resonant photoemission and x-ray magnetic circular dichroism studies of (Ga,Fe)As

Electronic- and band-structure evolution in low-doped (Ga,Mn)As

Towards a Fully Ab-Initio Description of the Diluted Magnetic Semiconductor $Ga_{1-x}Mn_{x}As$. Ferromagnetism, Electronic Structure, and Optical Response

Phenomenological Band Structure Model of Magnetic Coupling in Semiconductors

Probing the Semiconductor to Semimetal Transition in InAs/GaSb Double Quantum Wells by Magneto-Infrared Spectroscopy

Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism

Photoreflectance study of the fundamental optical properties of (Ga,Mn)As epitaxial films

Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions

Comparison of micromagnetic parameters of ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As

Experimental And Theoretical Investigations On Ferromagnetic Nature Of Mn-Doped Dilute Magnetic Semiconductors

Abnormal Magnetic Transport in Co/Mn/Co Sandwiches

Manganese-diffusion-induced n-doping in semiconductor structures containing Ga(Mn)As layers

Anomalous Spectroscopical Effects in an Antiferromagnetic Semiconductor