Abstract:Defect-controlled exfoliation of few-layer transition-metal carbide (f-Ti3C2Tx) MXene was demonstrated by optimizing chemical etching conditions, and electromagnetic interference (EMI) shielding coatings were explored. The structural features such as layer morphology, lateral size, layer thickness, defect density, and mechanical stability of the exfoliated f-Ti3C2Tx were strongly dependent on exfoliation conditions. By selecting appropriate exfoliation conditions, moderate etching time leads to the formation of quality f-Ti3C2Tx with lesser defects, whereas longer etching time can break the layer structure and increase defect density, structural misalignment, and oxidative products of f-Ti3C2Tx. The resultant fabricated free-standing flexible f-Ti3C2Tx films exhibited electrical conductivity and electromagnetic interference (EMI) shielding effectiveness (SE) in the X-band of about 3669 ± 33 S/m and 31.97 dB, respectively, at a thickness of 6 μm. The large discrepancy in EMI SE performance between quality (31.97 dB) and defected (3.164 dB) f-Ti3C2Tx sheets is attributed to interconnections between f-Ti3C2Tx nanolaminates interrupted by defects and oxidative products, influencing EMI attenuation ability. Furthermore, the demonstrated solution-processable high-quality f-Ti3C2Tx inks are compatible and, when applied for EM barrier coating on various substrates, including paper, cellulose fabric, and PTFE membranes, exhibited significant EMI shielding performance. Moreover, controlling defects in f-Ti3C2Tx and assembly of heterogeneous disordered carbon-loaded TiO2–Ti3C2Tx ternary hybrid nanostructures from f-Ti3C2Tx by tuning etching conditions could play an enormous role in energy and environmental applications.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c12835?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c12835</a>.Comparison of EMI performance of MXene and related nanostructures (Table S1–S3); XPS elemental composition (Table S4); illustration of f-Ti3C2Tx exfoliation (Figure S1); SEM characterization of the MAX phase (Figure S2); EDS mapping of f-Ti3C2Tx (Figure S3); TEM analysis of f-Ti3C2Tx (Figure S4); XRD pattern of f-Ti3C2Tx etching under different conditions (Figures S5 and S6); micro-Raman and TGA curve of f-Ti3C2Tx (Figures S7 and S8); XPS full survey and high-resolution XPS of individual elements(Figures S9 and S10); photographs of the free-standing f-Ti3C2Tx film (Figure S11); EMI SE vs conductivity correlation and frequency-dependent SEA and SER values (Figure S12); EMI SE for different sonication times (Figure S13); EMI SE for different plasma treatments (Figure S14); photographs of drop-casted f-Ti3C2Tx ink on different substrates (Figure S15); and characterization of f-Ti3C2Tx-coated substrates and EMI SE results (Figure S16) (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c12835/suppl_file/am0c12835_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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