High content anion (S/Se/P) doping assisted by defect engineering with fast charge transfer kinetics for high-performance sodium ion capacitors

Xinglan Deng,Kangyu Zou,Roya Momen,Peng Cai,Jun Chen,Hongshuai Hou,Guoqiang Zou,Xiaobo Ji
DOI: https://doi.org/10.1016/j.scib.2021.04.042
IF: 18.9
2021-09-01
Science Bulletin
Abstract:<p>The rate-determining process for sodium storage in TiO<sub>2</sub> is greatly depending on charge transfer happening in the electrode materials owing to its inferior diffusion coefficient and electronic conductivity. Apart from reducing the diffusion distance of ion/electron, the increasement of ionic/electronic mobility in the crystal lattice is also very important for charge transport. Here, an oxygen vacancy (OV) engineering assisted in high-content anion (S/Se/P) doping strategy to enhance charge transfer kinetics for ultrafast sodium-storage performance is proposed. Theoretical calculations indicate that OV-engineering evokes spontaneous S doping into the TiO<sub>2</sub> phase and achieves high dopant concentration to bring about impurity state electron donor and electronic delocalization over S occupied sites, which can largely reduce the migration barrier of Na<sup>+</sup>. To realize the speculation, high-content anion doped anatase TiO<sub>2</sub>/C composites (9.82 at% for S in A-TiO<sub>2–</sub><em><sub>x</sub></em>-S/C) are elaborately designed. The optimized A-TiO<sub>2–</sub><em><sub>x</sub></em>-S/C anode exhibits extraordinarily high-rate capability with 209.6 mAh g<sup>–1</sup> at 5000 mA g<sup>–1</sup>. The assembled sodium ion capacitors deliver an ultrahigh energy density of 150.1 Wh kg<sup>–1</sup> at a power density of 150 W kg<sup>–1</sup> when applied as anode materials. This work provides a new strategy to realize high content anion doping concentration, and enhance the charge transfer kinetics for TiO<sub>2</sub>, which delivers an efficient approach for the design of electrode materials with fast kinetic.</p>
multidisciplinary sciences
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