ALd of Metal Fluorides–Potential Applications and Current State

Elisa Atosuo,Miia Mäntymäki,Mikko Ritala
DOI: https://doi.org/10.1002/admi.202400372
IF: 5.4
2024-10-17
Advanced Materials Interfaces
Abstract:Metal fluorides are interesting materials for a multitude of applications, from optics to batteries and negative thermal expansion tuning. This review discusses current and potential future applications of metal fluorides and briefly describes their deposition using atomic layer deposition (ALD). More research into metal fluoride ALD is still needed to realize the full potential of the ALD method in these applications. Metal fluoride thin films are important materials in a multitude of applications. Currently, they are mostly used in optics, but their potential in energy harvesting and storage is recognized as well. Atomic layer deposition (ALD) is an advanced thin film deposition method that has an ever‐increasing role in microelectronics. The assets of ALD are its capability to produce uniform, stoichiometric, and pure films with precise thickness control even on top of complicated structures, such as high aspect ratio trenches. These characteristics can be beneficial in applications of metal fluoride thin films but so far ALD of metal fluorides has remained much less studied and used than ALD of metal oxides, nitrides, sulfides, and pure metals. This review aims to motivate research on ALD of metal fluorides by surveying potential applications for ALD metal fluoride thin films and coatings. The basics of luminescent applications, antireflection coatings, and lithium‐ion batteries will be discussed. Next, the fundamentals of ALD will be presented followed by a comprehensive summary of the metal fluoride ALD processes published so far.
materials science, multidisciplinary,chemistry
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