Abstract:Since the report of amorphous In-Ga-Zn-O (a-IGZO) based thin film transistors (TFTs), interest in oxide semiconductors has increased due to their high mobility, low off-current, low process temperature, and wide flexibility of compositions and processes. However, oxide semiconductors deposited by conventional processes like physical vapor deposition (PVD) leads a problematic issue to produce high-resolution displays and highly integrated memory devices due to the limited process flexibility and the poor conformality on the structured surface. Thus, a need to replace conventional deposition processes has emerged. Atomic layer deposition (ALD) is an advanced technique which could provide conformal, thickness-controlled, and high-quality thin film deposition. From these backgrounds, recently, studies on ALD based oxide semiconductors have dramatically increased. Even so, the relations of film properties of ALD-oxide semiconductors with the main variables associated with deposition and issues related to applications are still less understood than conventional one. In this review, we introduce ALD-oxide semiconductors by providing: (I) a brief history and importance of ALD-based oxide semiconductors in the industry, (II) a discussion of the value of ALD in oxide semiconductors (in-situ composition control in vertical distribution /vertical structure engineering / chemical reaction and film properties / insulator and interface engineering), and (III) an explanation of the challenging issues of scaling oxide semiconductors and ALD in industrial applications. This review provides a valuable perspective for researchers who have interest in semiconductor material and electronic devices by suggesting the reasons why ALD is important in the application of oxide semiconductors.

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