The shift current photovoltaic effect response in Wurtzite and Zincblende semiconductors via first-principles calculation
Qiu Yu,Yong Sun,Hui-Xue Shen,Huixia Fu,Manyi Duan,Cai Cheng
DOI: https://doi.org/10.1039/d4cp02478h
IF: 3.3
2024-10-17
Physical Chemistry Chemical Physics
Abstract:Recently, the search for materials with high photoelectric conversion efficiency has emerged as a significant research hotspot. Unlike p-n junctions, the bulk photovoltaic effect (BPVE) can also materialize within pure crystals. Here, we propose Wurtzite and Zincblende semiconductors without inversion symmetry (AgI, GaAs, CdSe, CdTe, SiGe, ZnSe, and ZnTe) as candidates for BPVE and investigate the factors that affect the shift current. Our theoretical research indicates that the Wurtzite structure exhibits superior BPVE compared to Zincblende due to its greater polarization. Specifically, GaAs with a Wurtzite structure demonstrate the highest shift current value of 31.8μA/V2. Meanwhile, the peak position of the maximum linear optical conductivity and shift current in the Wurtzite structure is lower than that in the Zincblende structure. In addition, we also found that strong covalency within the same main axis group element significantly influences the shift current, exemplified by Wurtzite SiGe, which reaches 15.8 μA/V2. Our research highlights the importance of a smaller band gap, reduced carrier effective mass, and increased covalency in achieving a substantial shift current response. Ultimately, this study provides valuable insights into the interplay of structural and electronic properties, offering directions for the discovery and design of materials with enhanced BPVE.
chemistry, physical,physics, atomic, molecular & chemical