Abstract:Memristive systems are an important class of nanoionic devices whose intriguing properties stem from formation/dissolution of localized conduction channels and have attracted extensive research interests as a disruptive technology for nonvolatile memory, in-memory logic, and brain-inspired computing. Here I will cover three topics regarding memristor research: 1) Mechanism: understandings of the switching mechanism and device dynamics are fundamentally important for guiding future device developments. We have performed systematic TEM studies on metal filaments based ReRAM devices, including both ex situ and in situ observations, on both vertical and planar device structures, in different material systems, and at different dimensions. The results reveal rich information about the structure, composition and chemical state of the filaments, the filament geometry and growth directions, as well as fundamental electrochemical dynamics that govern the ionic transport and filament growth processes [1-3]. We have used electrostatic force microscopy to directly probe oxygen ion migration and accumulation in HfO2 by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments. At higher voltages, oxygen–deficient nano-filaments are formed, as directly identified employing a CS-corrected transmission electron microscope [4]. 2) Device optimization: we engineered the analog switching linearity in TaOx based memristors by homogenizing the filament growth/dissolution rate via introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. Important synaptic learning rules in biological brains such as spike timing dependent plasticity was implemented using these optimized devices [5]. In addition, we experimentally demonstrated physically evolving networks in nanoscale, solid-state, multi-terminal memristive devices and heterosynaptic plasticity, an important learning rule found in biological systems, was demonstrated in a system where activity of the modulatory terminal strongly affects the synaptic facilitation/depression between the preand post-synaptic terminals [6]. 3) Integration: Large-scale integration of memristive synapses faces great challenges such as the sneak path problem, which can be mitigated by introducing nonlinearity into the device on-state. We have obtained memristors with on-state nonlinearity by adopting a novel oxide heterostructure where each oxide layer can be tailed for a specific function during resistance switching [7], and by employing functionalized graphene as the electrode that has threshold switching characteristics [8].

Set, Reset, and Retention Times for Ionic and Filamentary Mem-Resistors

A Physics-based Compact Model for Set Process of Resistive Random Access Memory (RRAM) with Graphene Electrode

A Compact Model for Electro-Thermal Co-Simulation of One Diode-One Resistor Random Access Resistive Memory

Quantitative, Dynamic TaOx Memristor/Resistive Random Access Memory Model

Dynamic Modeling and Atomistic Simulations of SET and RESET Operations in $\Hbox{tio}_{2}$-Based Unipolar Resistive Memory

A Consistent Model for Gradual, Abrupt, and Abnormal Reset Phenomena in Bipolar/Unipolar Metal Oxide RRAMs

Comprehensive numerical modeling of filamentary RRAM devices including voltage ramp-rate and cycle-to-cycle variations

Reaction-Drift Model for Switching Transients in Pr$_{0.7}$Ca$_{0.3}$MnO$_3$-Based Resistive RAM

An In-Depth Simulation Study of Thermal Reset Transitions in Resistive Switching Memories

Memristor Compact Model with Oxygen-Vacancy Concentration as State Variable

A Memadmittance Systems Model for Thin Film Memory Materials

Compact Analytical Models for the SET and RESET Switching Statistics of RRAM Inspired in the Cell-Based Percolation Model of Gate Dielectric Breakdown

A biology-inspired model for the electrical response of solid state memristors

Confirmation Of Filament Dissolution Behavior By Analyzing Electrical Field Effect During Reset Process In Oxide-Based Rram

The voltage-triggered SET mechanism and self-compliance characteristics in intrinsic unipolar SiOx-based resistive switching memory

Oxide-based RRAM: Physical based retention projection

Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory

Structural Analysis and Performance in a Dual‐Mechanism Conductive Filament Memristor

Memristors for Memory and Computing Applications

Kinetic Monte Carlo simulation of resistive switching and filament growth in electrochemical RRAMs

State Dynamics and Modeling of Tantalum Oxide Memristors