Abstract:Two-dimensional materials with both ferromagnetism and ferroelasticity present new possibilities for the development of spintronics and multifunctional devices. These materials offer a novel way of controlling the magnetization axis direction by switching the ferroelastic state, enabling efficient and low-power magnetic device operation. Such properties make them promising candidates for the next generation of non-volatile memory, sensors, and logic devices. By performing the first-principles calculations, we systematically investigated the ferromagnetism, ferroelasticity, and magnetoelastic coupling in MoTeX (X=F, Cl, Br, I) monolayers. The results indicate that MoTeX monolayers are intrinsic semiconductors holding both ferromagnetism and ferroelasticity. The pronounced in-plane magnetic anisotropy suggests that MoTeX monolayers can resist thermal disturbances and maintain long-range magnetic order. The Curie temperatures of MoTeX monolayers are 144.75, 194.55, 111.45, and 92.02 K, respectively. Our calculations show that the four MoTeX monolayers possess two stable ferroelastic states, with their easy magnetization axes perpendicular to each other. The ferroelastic transition barriers between the two ferroelastic states of MoTeF, MoTeCl, MoTeBr, MoTeI monolayers are 0.180, 0.200, 0.209, and 0.226 eV/atom, respectively, with reversible strains of 54.58%, 46.32%, 43.06%, and 38.12%. These values indicate the potential for reversible magnetic control through reversible ferroelastic transitions at room temperature. Owing to their unique magnetoelastic coupling properties, MoTeX monolayers demonstrate the ability of control on reversible magnetization axis at room temperature, laying the foundation for the development of highly controllable and stable spintronic devices.

Asymmetric Janus functionalization induced magnetization and switchable out-of-plane polarization in 2D MXene Mo 2 CXX′

Asymmetric Janus functionalization induced magnetization and switchable out-of-plane polarization in 2D MXene Mo<sub>2</sub>CXX

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Surface Vacancy-Induced Switchable Electric Polarization and Enhanced Ferromagnetism in Monolayer Metal Trihalides.

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Quantum Anomalous Valley Hall Effect in Ferromagnetic MXenes with Asymmetric Functionalization

Symmetry Engineering Induced In‐Plane Polarization in MoS 2 Through Van Der Waals Interlayer Coupling

Direct Exchange in Ultra‐Thin Ferromagnetic Janus MXenes

Intrinsic Multiferroic Semiconductors with Magnetoelastic Coupling*: Two-dimensional MoTeX(X=F, Cl, Br, I)monolayers

Design of Two-Dimensional Multiferroics with Direct Polarization-Magnetization Coupling.

Two-Dimensional Asymmetric Multiferroics: Unique Way toward Strong Magnetoelectric Coupling and Multistate Memory

Multiferroic properties of oxygen-functionalized magnetic i-MXene

Stacking order modulated anomalous valley Hall effect in antiferromagnetic MXene

Electrical Switchable Room-Temperature Magnetic Skyrmions in Multiferroic MXene

Tuning the Electronic and Magnetic Properties of Double Transition Metal MCrCT$_2$ (M = Ti, Mo) Janus MXenes for Enhanced Spintronics and Nanoelectronics

Janus MoCrSSe Monolayer: A Strong Two Dimensional Polar Antiferromagnet

Nonreciprocal and Nonvolatile Electric-Field Switching of Magnetism in Van Der Waals Heterostructure Multiferroics