High-efficiency ZnO:Al/p-GaN epitaxial heterojunction photocatalysts for antimicrobial application

Chih-Hao Liang,Yen-Yu Tsai,Ying-Jung Chen
DOI: https://doi.org/10.1016/j.mssp.2024.108448
IF: 4.1
2024-05-03
Materials Science in Semiconductor Processing
Abstract:Highly efficient ZnO:Al (AZO) thin-film-type photocatalysts with thicknesses of approximately 400 nm are deposited on (0001) p-GaN at deposition temperature of 400 °C via cathodic arc plasma evaporation to develop epitaxial heterojunction photocatalysts for antimicrobial applications. AZO films with a multidomain structure are deposited on (0001) sapphire to compare their antimicrobial performances. Their microstructural and electrical properties, depth-resolved cathodoluminescence spectra, and antibacterial activity are investigated. The results of antimicrobial activity analysis indicate that the AZO/p-GaN heterojunction photocatalysts exhibit better antibacterial activity against Staphylococcus aureus than the multidomain AZO films deposited on (0001) sapphire. The improvement in antibacterial activity is attributed to the built-in electric field formed by the AZO/p-GaN heterojunction, which results in enhanced separation between photogenerated electrons and holes under ultraviolet A irradiation. In addition, the AZO/p-GaN heterojunction photocatalysts possess higher concentrations of oxygen vacancies, defect levels, conductivities, and carrier mobilities than the multidomain AZO films. Therefore, they exhibit better antibacterial activity by inhibiting the growth of S. aureus . An excellent antimicrobial thin film-type AZO/p-GaN epitaxial heterojunction photocatalysts is successfully developed in this study for application in the microbial control field.
materials science, multidisciplinary,engineering, electrical & electronic,physics, applied, condensed matter
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