Abstract:Going down to the limit of ultrathin films holds promise for a new generation of devices such as ferroelectric tunnel junctions or resistive memories. However, these length scales also make the devices sensitive to parasitic effects related to miniaturization, and a better understanding of what happens as size is reduced is of practical importance for the future development of these devices. As the experimental advances in materials preparation and characterization have come together with great progress in theoretical modeling of ferroelectrics, both theorists and experimentalists can finally probe the same length and time scales. This allows realtime feedback between theory and experiment, with new discoveries now routinely made both in the laboratory and on the computer. Throughout this chapter, we will highlight the recent advances in density functional theory based modeling and the role it played in our understanding of ultrathin ferroelectrics. We will begin with a brief introduction to ferroelectricity and ferroelectric oxides, followed by an overview of the major theoretical developments. We will then discuss some of the subtleties of ferroelectricity in perovskite oxides, before turning our attention to the main subject of the chapter -- ferroelectricity in ultrathin films. We will discuss in detail the influence of the mechanical, electrical and chemical boundary conditions on the stability of the polar state in a parallel plate capacitor geometry, introducing the notion of depolarization fields that tend to destabilize ferroelectricity. We will look at other ways in which a thin ferroelectric can preserve its polar state, focusing on ferroelectric domains and domain walls. Finally, we will briefly discuss artificially layered ferroelectrics and the potential they hold as tailor-made materials for electronic applications.

Breaking the fundamental energy dissipation limit in ferroelectric-dielectric capacitors

On the negative capacitance in ferroelectric heterostructures

A Study of Ferroelectric Polarization Switching and Negative Capacitance Effect for Enhanced Energy Storage in on-Chip Electrostatic Supercapacitors

Physical Mechanism behind the Hysteresis-free Negative Capacitance Effect in Metal-Ferroelectric-Insulator-Metal Capacitors with Dielectric Leakage and Interfacial Trapped Charges

Ferroelectric Supercapacitors by Combining Polarization Switching and Negative Capacitance Effects for On-Chip Energy Storage

Strain engineering of dischargeable energy density of ferroelectric thin-film capacitors

Utilizing ferrorestorable polarization in energy-storage ceramic capacitors

Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors

A high-energy density antiferroelectric made by interfacial electrostatic engineering

Phase-field modeling for energy storage optimization in ferroelectric ceramics capacitors during heat treatment process

Ultrahigh energy storage in superparaelectric relaxor ferroelectrics

Study on A Nonlinear Antiferroelectric Capacitor

Improved Energy Density at High Temperatures of FPE Dielectrics by Extreme Low Loading of CQDs

First Observation of Negative Capacitance in Molecular Ferroelectric Thin Films

Revisiting the theory of ferroelectric negative capacitance

Dielectric Films For High Performance Capacitive Energy Storage: Multiscale Engineering

Ferroelectricity in ultrathin film capacitors

Antiferroelectric Ceramics for Energy‐Efficient Capacitors by Theory‐Guided Discovery

Deep Insight into the Voltage Amplification Effect from Ferroelectric Negative Capacitance

Differential voltage amplification from ferroelectric negative capacitance

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors