Ga 0.84 In 0.16 As 0.14 Sb 0.86 /InAs 0.91 Sb 0.09 Dual-Junction Device for Thermophotovoltaic Energy Conversion

Tingmei Fan,Chengyi Tian,Min Cui,Tingting Wei,Zhiqiang Liu,Yu Wang

DOI: https://doi.org/10.1109/ted.2020.3023663

IF: 3.1

2020-11-01

IEEE Transactions on Electron Devices

Abstract:We have theoretically shown thermophotovoltaic (TPV) energy conversion with Ga0.84In0.16As0.14Sb0.86/InAs0.91Sb0.09 tandem cell, for which both subcells have the same lattice matched to GaSb substrate and can be experimentally fabricated in a high quality. Under the illumination of blackbody-like thermal spectra, the doping profiles of this device should be controlled as ${N}_{d{(}{a}{)}} = {12}$ (6) $\times 10^{{17}}$ cm−3 for top subcell while 1018(17) cm−3 for bottom one, and energy conversion efficiency superior to 13% is expectable for radiator temperature ranging from 1700 to 2000 K, showing the enhancement in both efficiency and power density output when comparing with those for Ga0.84In0.16As0.14Sb0.86 single-junction cell. We have thus demonstrated a new type of experimentally available dual-junction cell to boost the thermal radiation conversion of TPV system.

engineering, electrical & electronic,physics, applied