Performance analysis of highly sensitive vertical tunnel FET for detecting light in near-IR range

Pathakamuri, Anil Kumar,Pandey, Chandan Kumar,Ashok, Tammisetti

DOI: https://doi.org/10.1007/s10854-024-12953-2

2024-06-25

Journal of Materials Science Materials in Electronics

Abstract:In this paper, an optically gated vertical tunnel field-effect transistor (OG-VTFET) based photodetector with different gate oxides is investigated to detect incident light with narrow-separated wavelengths (~ 100 nm) in the near-infrared (NIR) range (750–1050 nm). The optical performance parameters such as spectral sensitivity ( S n ), signal-to-noise ratio (SNR), quantum efficiency (ƞ), and responsivity (R) are observed to improve in the NIR range due to improvement in the ON-current ( I ON ), subthreshold swing ( SS avg ), and dark current ( I Dark ) offered by OG-VTFET. OG-VTFET with HfO 2 as gate oxide shows enhancement in the dual-line tunneling of charge carriers around the source-channel (S–C) interface, which eventually leads to improvement in I ON and SS avg compared to SiO 2 at wavelengths (λ) of light ranging from 750 to 1050 nm. Therefore, a high S n of ~200 is achieved for the proposed photodetector under the light condition when HfO 2 is used as a gate oxide. However, reduction in the dark current ( I dark ) using a low- dielectric i.e. SiO 2 as gate oxide reports a higher SNR value of ~82.2 dB compared to HfO 2 which offers ~60 dB of SNR at λ of 750 nm. Moreover, a portion of the channel is elevated around the gate corner to mitigate the corner effects at the S–C interface, which leads to an increase in the light-to-dark current ratio ( I light / I dark ) for the proposed photodetector when λ varies from 1050 to 750 nm. In addition, a heavily doped pocket deposited around the source region provides a better electric field at the S–C interface after an optical voltage is developed across the photosensing gate for the incident light falling on it. The quantum efficiency (ƞ) and responsivity (R) of OG-VTFET-based photodetector with HfO 2 gate oxide are eventually improved as more electron–hole pairs (EHPs) are generated under the illuminated state even at high λ of 1050 nm. ƞ and R are reported to be 2.1 and 1.77 A/W, respectively for OG-VTFET-based photodetector at λ of 1050 nm. Finally, the reliability concern of the proposed photodetector is examined by incorporating interface-trap charges (ITCs) at the oxide–semiconductor (O–S) interface, and an insignificant change in the SNR value is observed when SiO 2 is used as the gate oxide.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied