Spintronic Functionalities in Multiferroic Oxide-Based Heterostructures

I. Fina,X. Martí
DOI: https://doi.org/10.1201/9780429468193-6
2019-05-28
Abstract:This chapter discusses the important results published in the participating spintronic functionality: Tunnel magnetoresistance, Giant magnetoresistance, anisotropic magnetoresistance and magnetoresistance or resistance manipulation by an electric field. Spintronics foresees future storage memories, and other information technologies based on spin. The chapter describes the few works done on spintronic characterization at multiferroic domain walls, which belongs to a particular class of spintronic functionality in a multiferroic system. Multiferroics are an interesting alternative to pure ferromagnets. Multiferroic materials are those materials where one can find the coexistence of more than one ferroic order. If multiferroic/magnetoelectric materials are technologically exported, they will make use of spintronic functionality as a read-out technique. The simplest multiferroic tunnel junction is that where the spacer is ferroelectric and the emitting and the collecting electrodes are ferromagnetic. The tremendous effort done by the scientific community on the characterization of multiferroic materials has led to several results, important from the fundamental and technological points of view.
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