Abstract:Excitons, bound electron–hole pairs in a 2D plane, dominate the optical properties of monolayer transition metal dichalcogenides (TMDs). A large exciton binding energy on the order of 0.5 eV was theoretically predicted and experimentally determined recently. These ultrastable excitons thus open an avenue to explore the exciton physics such as Bose–Einstein condensation and superfluidity at room temperature (Kasprzak et al 2006 Nature 443 409; Plumhof et al 2014 Nat. Mater. 13 247; Fogler et al 2014 Nat. Commun. 5 4555; Jiang and John 2014 Sci. Rep. 4 7432). Recent experiments further demonstrated the concept of Coulomb engineering via dielectric environments based on either solutions or few-layer graphene. However, the conducting nature of these dielectrics can lead to quenching of optical transitions. Thus, in order to utilize ‘dielectric tuning’ of the exciton binding energy and quasiparticle band gaps, one must use insulating dielectrics. Here, we investigate the impact of insulating dielectric environments on the exciton binding energy of monolayer WS2 and WSe2 by exciton Rydberg spectroscopy, in which the dielectric environment is systematically varied from κ = 1.49 to 3.82. We found that, with increasing κ value, the exciton binding energy and quasiparticle bandgap exhibit significant reductions. Quantitatively, our result follows the prediction of nonlocally-screened Keldysh potential very well. The fitted 2D polarizability, , agrees rather well with previous density function theory calculations. Their close agreement validates the nonlocally screened Keldysh model which can be used to quantitatively predict the exciton binding energy for monolayer TMDs (and possibly other 2D materials) in different dielectric environments. Such a predictive model will play an important role for the design of van der Waals heterostructures and TMD-based optoelectronic devices.

Waveguiding valley excitons in monolayer transition metal dichalcogenides by dielectric interfaces in the substrate

Waveguiding valley excitons in monolayer transition metal dicalcogenides by dielectric interfaces in the substrate

Chiral excitonics in monolayer semiconductors on patterned dielectric

Chiral Excitonics in Monolayer Semiconductors on Patterned Dielectrics

Transport and Spatial Separation of Valley Coherence Via Few Layer WS2 Exciton-Polaritons

Controlling relaxation dynamics of excitonic states in monolayer transition metal dichalcogenides WS2 through interface engineering

Controlling relaxation dynamics of excitonic states in monolayer transition metal dichalcogenides WS 2 through interface engineering

Exciton dissociation in two-dimensional transition metal dichalcogenides: Excited states and substrate effects

Tailoring Exciton Dynamics of Monolayer Transition Metal Dichalcogenides by Interfacial Electron-Phonon Coupling

Cross-dimensional valley excitons from Förster coupling in arbitrarily twisted stacks of monolayer semiconductors

Routing Valley Exciton Emission of a WS 2 Monolayer Via Delocalized Bloch Modes of In-Plane Inversion-Symmetry-broken Photonic Crystal Slabs

Dielectric impact on exciton binding energy and quasiparticle bandgap in monolayer WS2 and WSe2

Robust Interlayer Coupling in Two-Dimensional Perovskite/Monolayer Transition Metal Dichalcogenide Heterostructures

Excitons and Electron–Hole Liquid State in 2D Γ‐phase Group‐IV Monochalcogenides

Inheritance of the exciton geometric structure from Bloch electrons in two-dimensional layered semiconductors

Symmetry governed valley-pseudospin textures of the full-zone excitonic bands of transition-metal dichalcogenide monolayers

Room temperature interlayer exciton valley polarization and valley Hall effect

Monolayer tungsten disulfide in photonic environment: Angle-resolved weak and strong light-matter coupling

Wave function forms of interlayer excitons in bilayer transition metal dichalcogenides

Control of the exciton valley dynamics in van der Waals heterostructures